The enabling solution of Cu/Low-k planarization technology

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 126-128

  Wada, Yutaka ^a   Noji, Ikutarou ^a   Kobata, Itsuki ^a   Kohama, Tatsuya ^a   Fukunaga, Akira ^a   Tsujimura, Manabu ^a  

^a EBARA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DISSOLUTION; ION EXCHANGE; RELIABILITY;

ELECTRO-CHEMICAL POLISHING; ION EXCHANGE FILMS; PLANARIZATION;

ELECTROCHEMISTRY;

EID: 28244466726     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. L.Economicos, et al, "Integrated Electro -Chemical Mechanical Polishing(Ecmp) for Future Generation", IITC 2004
2. Shuzo Sato, et al, "Newly Developed Electro-Chemical Polishing Process of Copper Inlaid in Frangile Low-k Dielectrics", IEDM 2001, pp.4.4.1-4.4.4
3. Y. Mori et al., JSPE Publication Series No. 3 (1999) p. 237
4. Y. Mori et al., Journal of the Japan Society for Precision Engineering (in Japanese), 67, 6 (2001) p. 932
5. Y. Mori et al., Journal of the Japan Society for Precision Engineering (in Japanese), 68, 9 (2002) p. 1241