Linear planalization for CMP

Solid State Technology

Volumn 39, Issue 10, 1996, Pages 107-114

  Jairath, Rahul ^a,b,c,d,e,f   Pant, Anil ^a,g,h   Mallon, Tom ^a,f,i,j   Withers, Bradley ^a,f,j,k   Krusell, Wilbur ^a,j,l,m  

^a OnTrak Systems Inc   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c CMP Technology

^d SEMATECH   (United States)

^e NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^f CVD ^*

^g RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^h R and D Organization   (India)

ⁱ SAN JOSE STATE UNIVERSITY   (United States)

^j OnTrak Systems   (United States)

^k CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

^l MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^m UNIVERSITY OF MICHIGAN   (United States)

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Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343798805     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (11)

1. W.J. Patrick, et al., "Application of chemical mechanical polishing to the fabrication of VLSI interconnects," J. Electrochem. Soc., Vol. 138, pp. 1778-1784, 1991.
2. S. Sivaram, et al., "Overview of dielectric planarizaton by chemical mechanical polish," Solid State Technology, pp. 87-91, May 1992.
3. R. Jairath, et al., "Chemical and mechanical polishing: Process manufacturability," Solid State Technology, p. 71, July 1994.
4. T. Kawane, "High cost of CMP slurry prevents use in DRAM," Semiconductor International, p. 58, 1996.
5. H. Dun, "CMP technology application in submicron ULSI," Tech. Symp. on CMP, SEMICON/Korea, Sept. 1994.
6. M. Stell, et al., "Planarization ability of chemical mechanical planarization processes," Proc. MRS, "Advanced metallization for devices and circuits - science, technology and manufacturability," ed. S.P. Murarka et al., pp. 151-156, 1994.
7. B. Dai, et al., "Characterization of chemical-mechanical polishing process with mechanical properties of oxide films," Proc. DUMIC 1995, pp. 149-153.
8. A. Maury, et al., "Optimization of CMP process for TEOS based oxide films using a designed experiment," Proc. CMP-MIC 1996, pp. 285-290.
9. J.J. Colacine, et al., "Analysis of velocity as a cause of thickness variation in a chemical-mechanical polishing process," Solid State Technology, p. 30, August 1973.
10. L. Cook, "Mechanisms of mechano-chemical polishing of oxides," SRC Topical Research Conference on CMP for Planarization, 1992.
11. R. Tolles, et al., "Performance of the Applied Materials CMP system for interlevel dielectric polishing processes using single and multi-step process sequences," Proc. CMP-MIC 1996, pp. 201-208.