A new theory for CMP with soft pads

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 73-75

  Shi, F G ^a   Zhao, B ^b   Wang, S Q ^c  

^a University of California at Irvine   (United States)

^b Rockwell Semiconductor Systems   (United States)

^c Allied Signal   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; NONLINEAR EQUATIONS;

CMP MECHANISM; COMBINED EFFECT; DIMENSIONLESS PARAMETERS; EXPERIMENTAL EVIDENCE; EXPERIMENTAL PARAMETERS; NEW RESULTS; PRESSURE DEPENDENCE; REMOVAL RATE;

CHEMICAL MECHANICAL POLISHING;

EID: 77956666717     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704755     Document Type: Conference Paper

References (10)

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8. If the abrasive particle/wafer and particle/pad interactions are plastic, one has
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