Cu planarization for ULSI processing by electrochemical methods: A review

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 3, 2005, Pages 341-349

  Suni, Ian Ivar ^a   Du, Bing ^b  

^a Clarkson University   (United States)

^b CLARKSON UNIVERSITY   (United States)

Author keywords

Electrochemical processes; Semiconductor device metallization; Semiconductor films

Indexed keywords

CHEMICAL MECHANICAL PLANARIZATION; ELECTROCHEMICAL PROCESSES; SEMICONDUCTOR DEVICE METALLIZATION; SEMICONDUCTOR FILMS;

DIELECTRIC MATERIALS; ELECTROCHEMISTRY; ELECTROLYTIC POLISHING; SEMICONDUCTOR DEVICES; ULSI CIRCUITS;

COPPER;

EID: 25144436315     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.852091     Document Type: Review

References (94)

1. S. P. Murarka, "Multilevel interconnections for ULSI and GSI era," Mater. Sci. Eng. R., vol. 19, pp. 87-151, 1997.
2. R. Rosenberg, D. C. Edelstein, C. K. Hu, and K. P. Rodbell, "Copper metallization for high performance silicon technology," Ann. Rev. Mater. Sci., vol. 30, pp. 229-262, 2000.
3. R. J. Gutmann, T. P. Chow, S. Lakshminarayanan, D. T. Price, J. M. Steigerwald, L. You, and S. P. Murarka, "Integrationn of copper multi-level interconnects with oxide and polymer interlevel dielectrics," Thin Solid Films, vol. 270, pp. 472-479, 1995.
4. T. J. Licata, E. G. Colgan, J. M. E. Harper, and S. E. Luce, "Interconnect fabrication processes and the development of low-cost wiring for CMOS products," IBM J. Res. Develop., vol. 39, pp. 419-435, 1995.
5. P. B. Zantye, A. Kumar, and A. K. Sikder, "Chemical mechanical planarization for microelectronics applications," Mater. Sci. Eng. R., vol. 45, pp. 89-220, 2004.
6. S. V. Babu, Y. Li, and A. Jindal, "Chemical-mechanical planarization of Cu and Ta," JOM, vol. 53, pp. 50-52, 2001.
7. T. Bibby and K. Holland, "Endpoint detection for CMP," J. Electron. Mater., vol. 27, pp. 1073-1081, 1998.
8. G. Zhang, G. Burdick, F. Dai, T. Bibby, and S. Beaudoin, "Assessment of post-CMP cleaning mechanisms by statistically designed experiments," Thin Solid Films, vol. 332, pp. 379-384, 1998.
9. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, 2nd ed. Sunset Beach, CA: Process Technology, Lattice Press, 2000, vol. 1.
10. G. M. Burdick, N. S. Berman, and S. P. Beaudoin, "A theoretical analysis of brush scrubbing following chemical mechanical planarization," J. Electrochem. Soc., vol. 150, pp. G140-G147, 2003.
11. _, "A theoretical evaluation of hydrodynamic and brush contact effects on particle removal during brush scrubbing," J. Electrochem. Soc., vol. 150, pp. G658-G655, 2003.
12. S. Eischenlaub, C. Chan, and S. P. Beaudoin, J. Colloid Interface Sci., vol. 248, pp. 389-397, 2002.
13. K. Mosig, T. Jacobs, K. Brennan, M. Rasco, J. Wolf, and R. Augur, "Integration challenges of porous ultra low-k spin-on dielectrics," Micro-electron. Eng., vol. 64, pp. 11-24, 2002.
14. F. Lanckmans, S. H. Brongersma, I. Varga, S. Poortsmans, H. Bender, T. Conard, and K. Maex, "A quantitative adhesion study between contacting materials in Cu damascene structures," Appl. Surf. Sci., vol. 201, pp. 20-34, 2002.
15. M. Fayolle, G. Passemard, O. Louveau, F. Fulalba, and J. Cluzel, "Challenges of back end of the line for sub 65 nm generation," Microelectron. Eng., vol. 70, pp. 255-266, 2002.
16. International Technology Roadmap for Semiconductors. [Online]. Available: http://public.itrs.net/Files/2003ITRS/Home2003.htm
17. R. J. Contolini, A. F. Bernhardt, and S. T. Mayer, "Electrochemical planarization for multilevel metallization," J. Electrochem. Soc., vol. 141, pp. 2503-2510, 1994.
18. R. J. Contolini, S. T. Mayer, R. T. Graff, L. Tarte, and A. F. Bernhardt, "Electrochemical planarization of ULSI copper," Solid State Technol., vol. 10, pp. 155-161, Jun. 1997.
19. S. C. Chang, J. M. Shieh, C. C. Huang, B. T. Dai, Y. H. Li, and M. S. Feng, "Microleveling mechanisms and applications of electropolishing on planarization of copper metallization," J. Vac. Sci. Technol. B, vol. 20, pp. 2149-2153, 2002.
20. D. Padhi, J. Yahalom, S. Gandikota, and G. Dixit, "Planarization of copper thin films by electropolishing in phosphoric acid for ULSI applications," J. Electrochem. Soc., vol. 150, pp. G10-G14, 2003.
21. J. Huo, R. Solanki, and J. McAndrew, "Study of anodic layers and their effects on electropolishing of bulk and electroplated films of copper," J. Appl. Electrochem., vol. 34, pp. 305-314, 2004.
22. A. Duboust, Y. Wang, S. Neo, and L. Y. Chen, "Endpoint Detection for Electrochemical Mechanical Polishing and Electropolishing Processes," U.S. Patent Application 20030136684, Jul. 24, 2003.
23. S. Takahashi, K. Tai, H. Ohtori, N. Komai, Y. Segawa, H. Horikoshi, Z. Yasuda, H. Yamada, M. Ishihara, and T. Nogami, "Fragile porous low-k/copper integration by using electro-chemical polishing," in Proc. IEEE Symp. VLSI Circ., 2002, pp. 32-33.
24. P. Dettner, Electrolytic and Chemical Polishing of Metals. Tel Aviv, Israel: Ordentlich, 1987.
25. M. Novak, A. K. N. Reddy, and H. Wroblowa, "An ellipsometric study of surface films on copper electrodes undergoing electropolishing," J. Electrochem. Soc., vol. 117, pp. 733-737, 1970.
26. D. Landolt, "Fundamental aspects of electropolishing," Electrochim. Acta, vol. 32, pp. 1-11, 1987.
27. D. Landolt, P. F. Chauvy, and O. Zinger, "Electrochemical micromachining, polishing, and surface structuring of metals: Fundamental aspects and new developments," Electrochim. Acta, vol. 48, pp. 3185-3201, 2003.
28. J. Newman, Electrochemical Systems. Englewood Cliffs, NJ: Prentice-Hall, 1973.
29. V. G. Levich, Physicochemical Hydrodynamics. Englewood Cliffs, NJ: Prentice-Hall, 1962.
30. M. Datta and R. V. Shenoy, "Electroetching Method and Apparatus," U.S. Patent 5 543 032, Aug. 6, 1996.
31. H. V. Reynolds, "Electroplaner," U.S. Patent no. 6106690, Aug. 22, 2000.
32. H. Wang, "Methods and Apparatus for Electropolishing Metal Interconnections on Semiconductor Devices," U.S. Patent 6395 152, May 28, 2002.
33. W. C. Elmore, "Electrolytic polishing," J. Appl. Phys., vol. 10, pp. 724-727, 1939.
34. _, "Electrolytic polishing. II," J. Appl. Phys., vol. 10, pp. 797-799, 1939.
35. J. Edwards, "The mechanism of electropolishing of copper in phosphoric acid solutions," J. Electrochem. Soc., vol. 100, pp. 189C-194C, 1953.
36. _, "The mechanism of electropolishing of copper in phosphoric acid solutions," J. Electrochem. Soc., vol. 100, pp. 223C-230C, 1953.
37. S. H. Glarum and J. H. Marshall, "The anodic dissolution of copper into phosphoric acid," J. Electrochem. Soc., vol. 132, pp. 2872-2878, 1985.
38. _, "Copper electropolishing in concentrated phosphoric acid," J. Electrochem. Soc., vol. 132, pp. 2878-2885, 1985.
39. R. Vidal and A.C. West, "Copper electropolishing in concentrated phosphoric acid," J. Electrochem. Soc., vol. 142, pp. 2682-2689, 1995.
40. _, "Copper electropolishing in concentrated phosphoric acid," J. Electrochem. Soc., vol. 142, pp. 2689-2694, 1995.
41. B. Du and I. I. Suni, "Mechanistic studies of copper electropolishing in phosphoric acid electrolytes," J. Electrochem. Soc., vol. 151, pp. C375-C378, 2004.
42. A. J. Bard and L. R. Faulkner, Electrochemical Methods: Fundamentals and Applications, 2nd ed. New York: Wiley, 2001.
43. B. Du and I. I. Suni, "Diffusion coefficients of water during copper electropolishing in phosphoric acid electrolytes," J. Appl. Electrochem., vol. 34, pp. 1215-1219, 2004.
44. J. Newman and L. Hsueh, Electrochim. Acta, vol. 12, pp. 417-427, 1967.
45. L. Hsueh and J. Newman, Etectrochim. Acta, vol. 12, pp. 429-438, 1967.
46. S. Calabrese-Barton and A. C. West, "Electrohydrodynamic impedance in the presence of nonuniform transport properties," J. Electrochem. Soc., vol. 148, pp. A381-A387, 2001.
47. H. Hocheng and P. S. Pa, "Continuous secondary ultrasonic electropolishing of an SKD61 cylindrical part," Int. J. Adv. Manuf. Technol., vol. 21, pp. 238-242, 2003.
48. H. Hocheng, "Method and Apparatus for Electropolishing Aided by Ultrasonic Energy Means," U.S. Patent 6315 885, Nov. 13, 2001.
49. S. C. Chang, J. M. Shieh, C. C. Huang, B. T. Dai, Y. H. Li, and M. S. Feng, "Pattern effects on planarization efficiency of Cu electropolishing," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes, vol. 41, pp. 7332-7337, 2002.
50. J. Pallinti, S. Lakshminarayanan, W. Barth, P. Wright, M. Lu, S. Reder, L. Kwak, W. Catabay, D. Wang, and F. Ho, "An overview of stress-free polishing of Cu with ultra low-k (k < 2.0) films," in IEEE Int. Interconnect Technol. Conf., Burlingame, CA, Jun. 7-9, 2004.
51. J. Yahalom, D. Padhi, S. Gandikota, and G. A. Dixit, " Electropolishing of Metallic Interconnects," U.S. Patent Application 20030 155 255, Aug. 21, 2003.
52. S. C. Chang, J. M. Shieh, B. T. Dai, M. S. Feng, Y. H. Li, C. H. Shin, M. H. Tasi, S. L. Shue, R. S. Liang, and Y. L. Wang, "Superpolishing for planarizing copper damascene interconnects," Electrochem. Solid-State Lett., vol. 6, pp. G72-G74, 2003.
53. K. Hensen and D. K. H. Shen, "Advanced Cu planarization technology: Electrochemical polishing," in 9th Int. Symp. Chem. Mechan. Planarization, Lake Placid, NY, Aug. 8-11, 2004.
54. J. Reid, "Method for Electrochemical Planarization of Metal Surfaces," U.S. Patent 6 653 226, Nov. 25, 2003.
55. I. Noji, I. Kobata, H. Yasuda, T. Iizumi, M. Kumekawa, Y. Wada, A. Fukunaga, M. Tsujimura, Y. Toma, T. Suzuki, and T. Saitoh, "Application of electro-chemical polishing in DI water to Cu damascene wiring planarization process," in Adv. Metallization Confe., Tokyo, Japan, Sep. 27-29, 2004.
56. R. Sautebin and D. Landolt, "Anodic leveling under secondary and tertiary current distribution conditions," J. Electrochem. Soc., vol. 129, no. 5, pp. 946-953, 1982.
57. C. Clerc and D. Landolt, "On the theory of anodic leveling: FEM simulation of the influence of profile shape and cell geometry," Electrochim. Acta, vol. 29, pp. 787-795, 1984.
58. A. C. West, S. Mayer, and J. Reid, "A superfilling model that predicts bump formation," Electrochem. Solid-State Lett., vol. 4, pp. C50-C53, 2001.
59. Y. Cao, P. Taephaisitphongse, R. Chalupa, and A. C. West, "Three-additive model of superfilling of copper," J. Electrochem. Soc., vol. 148, pp. C466-C472, 2001.
60. D. Josell, D. Wheeler, W. H. Huber, and T. P. Moffat, "Superconformal electrodeposition in submicron features," Phys. Rev. Lett., vol. 87, pp. 016102-1-016102-4, 2001.
61. T. P. Moffat, D. Wheeler, W. H. Huber, and D. Josell, "Superconformal electrodeposition of copper," Electrochem. Solid-State Lett., vol. 4, pp. C26-C29, 2001.
62. P. Singer, "Copper challenges for the 45 nm node," Semicond. Int., vol. 27, pp. 40-46, May 2004.
63. J. M. Steigerwald, R. Zirpoli, S. P. Murarka, D. Price, and R. J. Gutmann, "Pattern geometry effects in chemical mechanical polishing of inlaid copper structures," J. Electrochem. Soc., vol. 141, pp. 2842-284810, 1994.
64. M. Fayolle and F. Romagna, "Copper CMP evaluation: Planarization issues," Microelectron. Eng., vol. 37-38, pp. 135-141, 1997.
65. J. Y. Lai, N. Saka, and J. H. Chun, "Evolution of copper-oxide damascene structures in chemical mechanical polishing," J. Electrochem. Soc., vol. 149, pp. G31-G40, 2002.
66. _, "Evolution of copper-oxide damascene structures in chemical mechanical polishing,"J. Electrochem. Soc., vol. 149, pp. 041-050, 2002.
67. S. Lakshminarayanan, P. J. Wright, and J. Pallinti, "Electrical characterization of the copper CMP process and derivation of metal layout rules," in IEEE. Trans. Semicond. Manuf., vol. 16, Nov. 2003, pp. 668-676.
68. C. W. Tobias and R. Wijsman, "Theory of the effect of electrode resistance on current density distribution in electrolytic cells," J. Electrochem. Soc., vol. 100, pp. 459-467, 1953.
69. P. H. Vallotton, M. Matlosz, and D. Ladnolt, "Experimental investigation of the terminal effect in lead electrodeposition onto resistive substrates," J. Appl. Electrochem., vol. 23, pp. 927-932, 1993.
70. P. Desprez, M. Matlosz, J. D. Yang, and A. C. West, "Estimation of front velocity in electrodeposition onto highly resistive substrates," J. Electrochem. Soc., vol. 145, pp. 165-171, 1998.
71. K. M. Takahashi, "Electroplating copper onto resistive barrier films," J. Electrochem. Soc., vol. 147, pp. 1414-1417, 2000.
72. Y. Cao, J. M. Lee, and A. C. West, "Designs for minimizing resistive substrate effects on wafer metallization," Plat. Surf. Finish., vol. 90, pp. 40-45, 2003.
73. J. Flake, Y. Solomentsev, J. Cooper, and K. Cooper, "Wafer-scale profile evolution of electrochemically deposited copper films," J. Electrochem. Soc., vol. 150, pp. C195-C201, 2003.
74. M. Purcar, B. Van den Bosche, L. Bortels, J. Deconinck, and G. Nelissen, "Three-dimensional current density distribution simulations for a resistive patterned wafer," J. Electrochem. Soc., vol. 151, pp. D78-D86, 2004.
75. L. Sun, S. D. Tasi, and F. C. Redeker, "Method and Apparatus for Electrochemical Mechanical Planarization," U.S. Patent 6379223, Apr. 30, 2002.
76. F. Q. Liu, L. Y. Chen, S. D. Tasi, A. Duboust, S. S. Neo, Y. Hu, Y. Wang, and P. D. Butterfield, "Method and Composition for Polishing a Substrate," U.S. Patent Application 20040053499, Mar. 18, 2004.
77. P. D. Butterfield, L. Y. Chen, Y. Hu, A. P. Manens, R. Mavliev, S. D. Tasi, F. Q. Liu, and R. Wadensweiler, "Conductive Polishing Article for Electrochemical Mechanical Polishing," U.S. Patent Application 20 040 134 792, Jul. 15, 2004.
78. S. Tsai, L. Chen, A. Duboust, F. Liu, S. Neo, A. Manens, Y. Moon, and Y. Wang, "Electro-chemical mechanical planarization: Removal, planarization and process control by electrical charge," in 9th Int. Symp. Chem. Mechan. Planarization, Lake Placid, NY, Aug. 8-11, 2004.
79. L. Chen, "Breakthrough technology for CMP," in Semiconductor Fabtech, 24th ed., 2004, pp. 137-141.
80. L. Economikos, X. Wang, A. Sakamoto, P. Ong, M. Naujok, R. Knarr, L. Chen, Y. Moon, S. Neo, J. Saltfelder, A. Duboust, A. Mamens, W. Lu, S. Shrauti, F. Liu, S. Tsai, and W. Swart, "Integrated electro-chemical mechanical planarization (Ecmp) for future generation device technology," in IEEE Int. Interconnect Technol.Conf, Burlingame, CA, Jun. 7-9, 2004.
81. T. Nogami, A. Yoshio, and K. Sato, "Method for Producing Semiconductor Device Polishing Apparatus, and Polishing Method," U.S. Patent 6 693 036, Feb. 17, 2004.
82. M. Bojinov, "Modeling the formation and growth of anodic passive films on metals in concentrated acid solutions," J. Solid-State Electrochem., vol. 1, pp. 161-171, 1997.
83. P. Schmuki, "From bacon to barriers: A review on the passivity of metals and alloys," J. Solid-State Electrochem., vol. 6, pp. 145-164, 2002.
84. G. M. Florianovich and R. M. Lazorenko-Manevich, "Role of solution components in the processes of anodic dissolution of metals," Electrochim. Acta, vol. 42, pp. 879-885, 1997.
85. V. S. Muralidharan, "Role of anions in the dissolution, passivation and pitting of metals," Corros. Rev., vol. 21, pp. 327-437, 2003.
86. S. Chadda and C. Burns, "Method and Apparatus for Electrochemical Planarization of a Workpiece," U.S. Patent 6 464 855, Oct. 15, 2002.
87. N. H. Kim, J. H. Lim, S. Y. Kim, and E. C. Chang, "Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP," Mater. Lett., vol. 57, pp. 4601-4604, 2003.
88. 4 addition to slurry for Cu and TaN CMP," Electron. Lett., vol. 39, pp. 718-719, 2003.
89. O. Piotrowski, C. Madore, and D. Landolt, "Electropolishing of tantalum in sulfuric acid-methanol electrolytes," Electrochim. Acta, vol. 44, pp. 389-399, 1999.
90. S. Sapra, H. Li, Z. Wang, and I. I. Suni, "Voltammetry and impedance studies of the Ta/HF interface," J. Electrochem. Soc., vol. 152, pp. B193-B197, 2005.
91. B. Du and I. I. Suni, "Electrochemical removal of Ta and TaN diffusion barriers in fluoride-containing solutions," Electrochem. Solid-State Lett., to be published.
92. A. E. Kaloyeros and E. Eisenbraun, "Ultrathin diffusion barriers/liners for gigascale copper metallization," Annu. Rev. Mater. Sci., vol. 30, pp. 363-385, 2000.
93. I. Goswami and R. Laxman, "Transition metals show promise as copper barriers," Semicond. Inter., vol. 27, no. 5, pp. 49-54, 2004.
94. O. Chyan, T. N. Arunagiri, and T. Ponyswamy, "Electrodeposition of copper thin film on ruthenium," J. Electrochem. Soc., vol. 150, pp. C347-C350, 2003.