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Volumn 214, Issue 1, 1998, Pages 10-13
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Effect of slurry viscosity modification on oxide and tungsten CMP
a a a a |
Author keywords
Chemical mechanical polishing; Slurry wafer; Viscosity
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Indexed keywords
COMPOSITION EFFECTS;
OXIDES;
RHEOLOGY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON WAFERS;
SLURRIES;
SUBSTRATES;
TUNGSTEN;
VISCOSITY OF LIQUIDS;
CHEMICAL MECHANICAL POLISHING (CMP);
POLISHING SLURRIES;
CHEMICAL POLISHING;
OXIDE;
RHEOLOGY;
SLURRY;
TUNGSTEN;
VISCOSITY;
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EID: 0031920304
PISSN: 00431648
EISSN: None
Source Type: Journal
DOI: 10.1016/S0043-1648(97)00219-6 Document Type: Article |
Times cited : (32)
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References (11)
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