Influence of initial wafer cleanliness on metal removal efficiency in immersion SC-1 cleaning: Limitation of immersion-type wet cleaning

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 1, 1998, Pages 20-24

  Osaka, Tsutomu ^a   Hattori, Takeshi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; CONTAMINATION; IMPURITIES; SEMICONDUCTOR DEVICE MANUFACTURE; SOLUTIONS; SURFACE CLEANING;

IMMERSION CLEANING; WET CLEANING;

SILICON WAFERS;

EID: 0031999802     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.661280     Document Type: Article

References (14)

1. T. Hattori, "Contamination control: Problems and prospects," Solid State Technol., vol. 33, no. 7, pp. S1-S8, July 1990.
2. _, "Japanese views on contamination control for VLSI and ULSI," Solid Sate Technol., vol. 36, no. 11, pp. S19-S20, 1993;
3. also, Solid Sate Technol., vol. 37, no. 2, pp. 79-80, 1994.
4. _, "Particle reduction in VLSI manufacturing," in Contamination Control and Defect Reduction in Semiconductor Manufacturing III, N. Schmidt, Ed. Pennington, NJ: Electrochem. Soc., 1994, PV94-9, pp. 3-14.
5. _, "Detection and identification of particles on silicon surfaces," in Partideson Surfaces, K. L. Mittal, Ed. New York: Marcel Dekker, 1995, pp. 201-217.
6. _, "Trends in wafer cleaning technology," Solid State Technol., vol. 38, no. 5, pp. S7-S10, 1995.
7. T. Hattori, S. Koyata, M. Funada, and H. Mishima, "Introducing a new PFA wafer carrier cleaning technology," Microcontamination, vol. 9, no. 12, pp. 17-21, 1991.
8. K. Saga and T. Hattori, "Identification and removal of trace organic contamination on silicon wafers stored in plastic boxes," J. Electrochem. Soc., vol. 143, no. 10, pp. 3279-3284, 1996.
9. M. Watanabe, I. Kanno, and T. Ohmori, "Influence of particles/impurity metals in RCA cleaning solutions on surface contamination," in Proc. ISSM'94, Tokyo, Japan, 1994, pp. 99-102.
10. W. Kern and D. A. Puotinen, "Clean solutions based on hydrogen peroxide for use in silicon semiconductor technology," RCA Rev., vol. 31, pp. 187-206, 1970.
11. J. Ryuta, T. Yoshimi, H. Kondo, H. Okuda, and Y. Shimanuki, "Adsorption and desorption of metallic impurities on Si wafer surfaces in SC-1 solution," Jpn. J. Appl. Phys., vol. 3, Pt. 1, no. 8, pp. 2338-2342, 1992.
12. J. Ryuta, I. Takahashi, C. Okada, H. Kobayashi, G. Maeda, and T. Shinjoji, "Study of chemical reactions of Si surface in SC-1 silicon," in Ext. Abstr. Electrochem. Soc. Fall Meeting, Chicago, IL, 1995, vol. 95-2, pp. 688-689.
13. T. Osaka, S. Koyata, and T. Hattori, "Cost reduction of standard wafer wet cleaning," in Proc. Fifth Sony Research Forum '95, Tokyo, Japan, 1995, pp. 186-191.
14. T. Osaka and T. Hattori, "Contamination removal by single-wafer spin cleaning with repetitive use of ozonized water and dilute HF," in Cleaning Technology in Semiconductor Device Manufacturing V. Pennington, NJ: Electrochem. Soc., 1998.