Origin of anomalous electronic structures of epitaxial graphene on silicon carbide

Physical Review Letters

Volumn 100, Issue 17, 2008, Pages

  Kim, Seungchul ^a   Ihm, Jisoon ^a   Choi, Hyoung Joon ^b   Son, Young Woo ^c  

^a Seoul National University   (South Korea)

^b Yonsei University   (South Korea)

^c Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; SILICON CARBIDE; SURFACE CHEMISTRY;

DIRAC POINT; EPITAXIAL GRAPHENE; INTERFACIAL RECONSTRUCTION;

ELECTRONIC STRUCTURE;

EID: 43049117196     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.176802     Document Type: Article

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