High field transport properties of 2D and nanoribbon graphene FETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 207-208

  Tahy, Kristof ^a   Koswatta, Siyuranga ^b   Fang, Tian ^a   Zhang, Qin ^a   Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; GRAPHENE NANO-RIBBON; GRAPHENE TRANSISTORS; GRAPHENES; HIGH CURRENTS; HIGH FIELD; HIGH FIELD TRANSPORT PROPERTIES; HIGH MOBILITY; NANORIBBONS; REPLACEMENT MATERIALS; SATURATION REGIME;

CMOS INTEGRATED CIRCUITS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GRAPHENE; GRAPHITE; MESFET DEVICES; RESEARCH; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 76549096845     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354954     Document Type: Conference Paper

References (4)

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2. X. Luo, K. Tahy, G. Snider, H. Xing, and D. Jena "High Field Characteristics of Long and Short channel 2D Graphene FETs", Manuscript submitted for publication to IEEE EDL. I. Meric, M. Y. Han, A. F. Young, B. Oezyilmaz, P. Kim and K. L. Shepard, Nature Nanotech. 3, 654-659, 2008.
3. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, PRL 101, 026803 (2008).
4. Q. Zhang, T. Fang, A. Seabaugh, H. Xing, and D. Jena IEEE Electron Device Lett. 29 (12), 1344, 2008.