Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 745-747

  Kedzierski, Jakub ^a   Hsu, Pei Lan ^a   Reina, Alfonso ^a   Kong, Jing ^a   Healey, Paul ^a   Wyatt, Peter ^a   Keast, Craig ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carbon CVD; Carbon transistors; Chemical vapor deposition (CVD); Epitaxial graphene; Graphene; Graphene transistors

Indexed keywords

CARBON TRANSISTORS; EPITAXIAL GRAPHENE; GRAPHENE; GRAPHENE TRANSISTORS;

INSULATION; SILICON CARBIDE; TRANSISTORS; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 67650423945     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020615     Document Type: Article

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