Perspectives of graphene nanoelectronics: Probing technological options with modeling

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Iannaccone, G ^a   Fiori, G ^a   MacUcci, M ^a   Michetti, P ^a   Cheli, M ^a   Betti, A ^a   Marconcini, P ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING;

ELECTRON DEVICES; GRAPHITE; NANOELECTRONICS;

GRAPHENE;

EID: 77952405296     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424376     Document Type: Conference Paper

References (26)

1. A. K. Geim, "Graphene: status and prospects", Science Vol.324, pp. 1530-1534, 2009.
2. NanoTCAD VIDES. Code, user's manual, and online demo on the Purdue Nanohub (www.nanohub.org/tools/vides).
3. Y.-W. Son, M. L. Cohen, S. G. Louie, "Energy gaps in graphene nanoribbons", Phys. Rev. Lett. Vol.97, n. 21, 216803-1-4, 2006.
4. G. Fiori, G. Iannaccone, "Simulation of grapheme nanoribbon fieldeffect transistors", IEEE EDL Vol.28, n. 8, pp. 760-762, 2008
5. Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, J. Guo, "Performance comparison of graphene nanoribbon FETs with schottky contacts and doped reservoirs", IEEE TED Vol.55, n. 9, pp. 2314-2323, 2008.
6. P. Michetti, G. Mugnaini, G. Iannaccone "Analytical model of nanowire FETs in a partially ballistic transport regime", IEEE-TED Vol.56, n. 7, pp. 1402-1410, 2009.
7. E. McCann, V. I. Fal'ko, "Landau-level degeneracy and quantum Hall effect in a graphite layer", Phys. Rev. Lett. Vol.96, n. 8, 086805-1-4, 2006.
8. E.V. Castro, K. S. Novoselov, V. Morozov, N.M.R. Peres, J.M.B. Lopes dos Santos, J. Nilsson, F. Guinea, A. K. Geim, and A. H. Castro Neto, "Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect", Phys. Rev. Lett., Vol.99, p. 216902, 2007.
9. T. Ohta et al., "Controlling the electronic structure of bilayer graphene", Science, Vol.313, n. 5789, pp. 951-954, 2008.
10. Y. Zhang, T.T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, F. Wang, "Direct observation of a widely tunable bandgap in bilayer graphene", Nature,Vol. 459, p. 820-823, 2009.
11. Y. Ouyang, P. Campbell, J.Guo, "Analysis of ballistic monolayer and bilayer graphene field-effect transistors", Appl. Phys. Lett. Vol.92, n. 6, pp. 063120-1-3, 2008.
12. V. Ryzhii et al., "Device model for graphene bilayer field effect transistor", J. Appl. Phys, vol.105, p. 104510, 2009.
13. G. Fiori, G. Iannaccone, "On the possibility of tunable-gap bilayer graphene FET", IEEE EDL, Vol.30, n. 3, pp. 261-264, 2009
14. M. Cheli, G. Fiori, G. Iannaccone, "Semi-analytical model of bilayer graphene field-effect transistor", accepted for publication on IEEETED, Dec. 2009 (http://www.arxiv.org/pdf/0812.4739)
15. International Technology Roadmap for Semiconductors, 2008 update (http://public.itrs.net)
16. J. Appenzeller, Y. M. Lin, J. Knoch, P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors", Phys. Rev. Lett. Vol.93, n. 19, pp. 196805-1-5, 2004.
17. Q. Zhang et al. "Graphene nanoribbon tunnel transistors", IEEE-EDL, Vol.29, n. 12, pp. 1344-1346, 2008.
18. R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani, "Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects", Proc. ULIS 2009, pp. 57-60, 2009.
19. G. Fiori, G. Iannaccone, "Ultralow-voltage graphene bilayer tunnel FET", to be published on IEEE-EDL, 2009 (http://arxiv.org/abs/0906.1254).
20. S. Y. Zhou et al., "Substrate-induced bandgap opening in epitaxial graphene", Nat. Mat., Vol.6, n. 10, p. 770, 2007.
21. M. Cheli, P. Michetti, G. Iannaccone, "Physical Insights on Nanoscale FETs based on epitaxial graphene on SiC", Proc. ESSDERC 2009, 193-196, 2009.
22. T. J. Echtermeyer, M. C. Lemme, M. Baus, B. N. Szafranek, A. K. Geim, H. Kurz, "Nonvolatile Switching in Graphene Field-Effect Devices", IEEE EDL, Vo. 29, pp. 952-954, 2009.
23. D. C. Elias et al., "Control of graphene's properties by reversible hydrogenation", Science Vol.323, pp. 610, 2009.
24. B. Biel, F. Triozon, X. Blase, S. Roche, "Chemically Induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances", Nano Letters Vol.9, n. 7, pp. 2725-2729, 2009.
25. P. Marconcini, G. Fiori, A. Ferretti, G. Iannaccone, M. Macucci, "Numerical analysis of transport properties of boron-doped graphene FETs", Proc. 13th International Workshop on Computational Electronics, pp. 1-4, Bejing 2009.
26. Y. Ouyang, Y. Yoon, J. Guo, "Edge chemistry engineering of graphene nanoribbon transistors: a computational study", Tech. Dig. IEDM, pp 1-4, 2008.