SCOPUS 정보 검색 플랫폼

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 201-202

Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

(2) Luisier, Mathieu a Klimeck, Gerhard a

a Purdue University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS; FULLY COMPATIBLE; GATE POTENTIALS; GRAPHENE NANO-RIBBON; III-V COMPOUND SEMICONDUCTOR; LINE EDGE ROUGHNESS; NARROW BANDS; ON-CURRENTS; ON/OFF RATIO; PERFORMANCE LIMITATIONS; PLANAR PROCESSING; QUANTITATIVE SIMULATION; QUANTUM MECHANICAL; RANDOM CONFIGURATIONS; ROOM TEMPERATURE; SOURCE-TO-DRAIN TUNNELING; STATISTICAL SAMPLING; SUBTHRESHOLD SLOPE; TUNNELING FET; TUNNELING FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; PHOTORESISTS; QUANTUM THEORY; SAMPLING; SEMICONDUCTING SILICON COMPOUNDS; TUNNELING (EXCAVATION); WIND TUNNELS;

ROUGHNESS MEASUREMENT;

EID: 76549127040 PISSN: 15483770 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/DRC.2009.5354951 Document Type: Conference Paper

Times cited : (9)

References (7)

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