Ultralow-voltage bilayer graphene tunnel FET

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1096-1098

  Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Bilayer graphene; Low power device; Non equilibrium green's function (NEGF); Tunnel field effect transistor (TFET)

Indexed keywords

BI-LAYER; CIRCUIT INTEGRATION; DINGER EQUATION; GRAPHENE NANORIBBONS; GRAPHENES; LOW-POWER DEVICES; NON-EQUILIBRIUM GREEN'S FUNCTION; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; QUANTUM CAPACITANCE; ROOM TEMPERATURE; SUBTHRESHOLD SWING; SUPPLY VOLTAGES; THREE DIMENSIONS; TIGHT-BINDING HAMILTONIANS; TUNNEL FET; ULTRA-LOW-VOLTAGE;

DIFFERENTIAL EQUATIONS; ELECTRIC EQUIPMENT; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GRAPHITE; TUNNELS; WIND TUNNELS;

GREEN'S FUNCTION;

EID: 72049110509     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2028248     Document Type: Article

References (16)

1. E. McCann and V. I. Falko, "Landau-level degeneracy and quantum hall effect in a graphite bilayer," Phys. Rev. Lett, vol.96, no.8, p. 086 805, Mar. 2006.
2. J. Nilsson, A. H. Castro Neto, F. Guinea, and N. M. R. Peres, "Electronic properties of graphene multilayers," Phys. Rev. Lett., vol.97, no.26, p. 266 801, Dec. 2006.
3. E. V. Castro, K. S. Novoselov, V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, J. Nilsson, F. Guinea, A. K. Geim, and A. H. Castro Neto, "Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect," Phys. Rev. Lett., vol.99, no.21, p. 216 802, Nov. 2007.
4. V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and N. Kirova, "Device model for graphene bilayer field-effect transistor," J. Appl. Phys., vol.105, p. 104 510, 2009.
5. Z. Chen, Y.-M. Lin, M. J. Rooks, and P. Avouris, "Graphene nano-ribbon electronics," Phys. E, vol.40, no.2, pp. 228-232, Dec. 2007.
6. G. Fiori and G. Iannaccone, "Simulation of graphene nanoribbon fieldeffect transistors," IEEE Electron tmn Device Lett, vol.28, no.8, pp. 760-762, Aug. 2007.
7. G. Fiori and G. Iannaccone, "On the possibility of tunable-gap bilayer graphene," IEEE Electron Device Lett, vol.30, no.3, pp. 261-264, Mar. 2009.
8. W. Hansch, C Fink, K. Schulze, and I. Eisele, "A vertical MOS-gated Esaki tunneling transistor in silicon," Thin Solid Films, vol.369, no.1, pp. 387-389, Jul. 2000.
9. S. O. Koswatta, M. S. Lundstrom, and D. E. Nikonov, "Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors," Appl. Phys. Lett, vol.92, no.4, p. 043 125, Jan. 2008.
10. P. Zhao, J. Chauhan, and J. Guo, "Computational study of tunneling transistor based on graphene nanoribbon," Nano Lett, vol.9, no.2, pp. 684-688, Feb. 2009.
11. J. Knoch and J. Appenzeller, "Tunneling phenomena in carbon nanotubes field-effect transistors," Phys. Stat. Sol., vol.205, no.4, pp. 679-694, 2008.
12. [Online], Available: http://www.nan.ohub.org/tools/vides
13. G. Fiori and G. Iannaccone, "Performance analysis of graphene bilayer transistors through tight-binding simulations," in Proc. 13th Int. Workshop Comput. Electron., Beijing, China, May 27-29, 2009, pp. 1-4.
14. A. Campera, G. Iannaccone, and F. Crupi, "Modeling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction, of material parameters," IEEE Trans. Electmn Devices, vol.54, no.1, pp. 83-89, Jan. 2007.
15. Y. Zhang, T Tang, C. Girit, Z. Hao, M. C Martin, A. Zettl, M. Crommie, Y. Shen, and F. Wang, "Direct observation of a widely tunable bandgap in bilayer graphene," Nature, vol.459, no.7248, pp. 820-823, Jun. 2009.
16. 2/Sí structure," Solid State Electron., vol.38, no.8, pp. 1465-1471, Aug. 1995.