What do we know about hydrogen-induced thermal donors in silicon?

Journal of the Electrochemical Society

Volumn 156, Issue 6, 2009, Pages

  Simoen, E ^a   Huang, Y L ^b   Ma, Y ^a   Lauwaert, J ^c   Clauws, P ^c   Rafi J M ^d   Ulyashin, A ^e,g   Claeys, C ^a,f  

^a IMEC   (Belgium)

^b Baoding Tianwei Solarfilms Co Ltd   (China)

^c GHENT UNIVERSITY   (Belgium)

^d INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^e UNIVERSITY OF OSLO   (Norway)

^f UNIVERSITY OF LEUVEN   (Belgium)

^g SINTEF   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC ROLES; CHARGE STATE; DEEP-LEVEL TRANSIENT SPECTROSCOPIES; DOPING CONCENTRATIONS; EXCESS CARRIERS; EXPERIMENTAL CONDITIONS; FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPIES; FREE CARRIERS; HYDROGENATED MATERIALS; INTERSTITIAL OXYGENS; OXYGEN THERMAL DONORS; SHALLOW DONORS; SHALLOW THERMAL DONORS; SPECTROSCOPIC TECHNIQUES; TEMPERATURE RANGES; THERMAL ANNEAL; THERMAL DONORS;

CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; INFRARED SPECTROSCOPY; OXYGEN; PLASMAS;

ABSORPTION SPECTROSCOPY;

EID: 65449117949     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3111039     Document Type: Article

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