Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Materials Science and Engineering: B

Volumn 134, Issue 2-3 SPEC. ISS., 2006, Pages 189-192

  Simoen, E ^a   Claeys, C ^a,b   Rafi J M ^c   Ulyashin, A G ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^d UNIVERSITY OF OSLO   (Norway)

Author keywords

C V; DLTS; Hydrogen; Si; Thermal donors

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; HYDROGEN; HYDROGENATION; RADIATION DAMAGE; SILICON;

ATOMIC HYDROGEN; OXYGEN THERMAL DONORS (OTD); THERMAL DONOR FORMATION; THERMAL DONORS (TD);

PLASMA APPLICATIONS;

EID: 33750328840     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.06.041     Document Type: Article

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