The temperature evolution of the hydrogen plasma induced structural defects in crystalline silicon

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 315-320

  Nordmark, Heidi ^a   Ulyashin, Alexander ^b   Walmsley, John C ^a,c   Holt, Arve ^b   Holmestad, Randi ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

Author keywords

AFM; Hydrogen; Lifetime; Raman; SEM; Silicon; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; MICROWAVES; PHOTOCONDUCTIVITY; RAMAN SPECTROSCOPY; CARRIER LIFETIME; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGENATION; MOLECULES; PHOSPHORUS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE SILICON; HYDROGEN PLASMA; PHOTOCONDUCTIVITY DECAY; TEMPERATURE EVOLUTION; CRYSTALLINE SILICONS; LIFETIME; MICROWAVE PHOTOCONDUCTIVITY DECAYS; MINORITY CARRIER LIFETIMES; RAMAN; RECOMBINATION CENTRES; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON; HYDROGEN;

EID: 38549094612     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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