Dependence of hydrogen diffusion on the electric field in p-type silicon

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Huang, Y L ^a   Wdowiak, B ^a   Job, R ^a   Ma, Y ^a   Fahrner, W R ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CAPACITANCE; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; HYDROGEN; HYDROGENATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEPARATION; THERMOANALYSIS;

DIFFUSIVITY; HYDROGEN DRIFTS; HYDROGEN FLUX; THERMAL DONORS;

SILICON;

EID: 5044224550     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1774490     Document Type: Article

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