Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 197-202

  Job, R ^a   Fahrner, W R ^a   Ulyashin, A G ^b  

^a UNIVERSITY OF HAGEN   (Germany)

^b INSTITUTE FOR MATHEMATICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC EQUIPMENT; HYDROGEN; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION;

CZOCHRALSKI SILICON; PLASMA TREATMENT; SPREADING RESISTANCE PROBE ANALYSIS; THERMAL DONOR;

SEMICONDUCTING SILICON;

EID: 0033877490     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00463-8     Document Type: Article

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