Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

Journal of the Electrochemical Society

Volumn 152, Issue 1, 2005, Pages

  Rafi J M ^a   Simoen, E ^a   Claeys, C ^a,b   Huang, Y L ^c   Ulyashin, A G ^c   Job, R ^c   Versluys, J ^d   Clauws, P ^d   Lozano, M ^e   Campabadal, F ^e  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF HAGEN   (Germany)

^d GHENT UNIVERSITY   (Belgium)

^e INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; ELECTRIC FIELD EFFECTS; EUTECTICS; PLASMA THEORY;

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DIRECT PLASMA HYDROGENATION; OXYGEN THERMAL DONORS (OTD); THERMAL DONOR (TD) FORMATION;

HYDROGENATION;

EID: 19944431536     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1824039     Document Type: Article

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