Shallow thermal donors associated with H, Al and N in annealed Czochralski silicon distinguished by infrared spectroscopy

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1404-1408

  Pritchard, R E ^a   Ashwin, M J ^a   Tucker, J H ^a   Newman, R C ^a   Lightowlers, E C ^b   Gregorkiewicz, T ^c   Zevenbergen, I S ^c   Ammerlaan, C A J ^c   Falster, R ^d   Binns, M J ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF AMSTERDAM   (Netherlands)

^d MEMC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011183163     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/012     Document Type: Article

References (34)

1. Wagner P and Hage J 1989 Appl. Phys. A 49 123
2. Götz W, Pensl G and Zulehner W 1992 Phys. Rev. B 46 4312
3. Michel J, Niklas J R and Spaeth J-M 1989 Phys. Rev. B 40 1732
4. Lee K M, Trombetta J M and Watkins G D 1985 Mater. Res. Soc. Symp. Proc. 46 263
5. Meilwes N, Spaeth J-M, Götz W and Pensl G 1994 Semicond. Sci. Technol. 9 1632
6. Newman R C, Tucker J H, Semaltianos N G, Lightowlers E C, Gregorkiewicz T, Zevenbergen I S and Ammerlaan C A J 1996 Phys. Rev. B 54 R6803
7. Navarro H, Griffin J, Weber J and Genzel L 1986 Solid State Commun. 58 151
8. Griffin J, Navarro H, Weber J and Genzel L 1986 Mater. Sci. Forum 10-12 997
9. Suezawa M, Sumino K, Harada H and Abe T 1986 Japan. J. Appl. Phys. 25 L859 Suezawa M, Sumino K, Harada H and Abe T 1988 Japan. J. Appl. Phys. 27 62
10. Suezawa M, Sumino K, Harada H and Abe T 1986 Japan. J. Appl. Phys. 25 L859 Suezawa M, Sumino K, Harada H and Abe T 1988 Japan. J. Appl. Phys. 27 62
11. Griffin J, Hartung J and Weber J 1989 Mater. Sci. Forum 38-41 619
12. Griffin J, Hartung J, Weber J, Navarro H and Genzel L 1989 Appl. Phys. A 48 41
13. Steele A G, Lenchyshyn L C and Thewalt M L W 1990 Appl. Phys. Lett. 56 148
14. Hara A, Hirai I and Ohsawa A 1990 J. Appl. Phys. 67 2462
15. Hara A, Aoki M, Koizuka M and Fukuda T 1994 J. Appl. Phys. 75 2929
16. Hara A 1995 Japan. J. Appl. Phys. 34 3418
17. Gregorkiewicz T, Bekman H H P Th and Ammerlaan C A J 1988 Phys. Rev. B 38 3998
18. Gregorkiewicz T, van Wezep D A, Bekman H H P Th and Ammerlaan C A J 1987 Phys. Rev. Lett. 59 1702
19. Martynov Yu V, Gregorkiewicz T and Ammerlaan C A J 1995 Phys. Rev. Lett. 74 2030 Martynov Yu V, Gregorkiewicz T and Ammerlaan C A J 1995 Mater. Sci. Forum 196-201 849
20. Martynov Yu V, Gregorkiewicz T and Ammerlaan C A J 1995 Phys. Rev. Lett. 74 2030 Martynov Yu V, Gregorkiewicz T and Ammerlaan C A J 1995 Mater. Sci. Forum 196-201 849
21. McQuaid S A, Newman R C and Lightowlers E C 1994 Semicond. Sci. Technol. 9 1736
22. Claybourn M and Newman R C 1989 Mater. Sci. Forum 38-41 613
23. Kopalko K, Kaczor P, Godlewski M and Gregorkiewicz T 1991 Acta Phys. Pol. A 80 345 Kopalko K, Kaczor P, Godlewski M and Gregorkiewicz T 1992 Acta Phys. Pol. A 82 677
24. Kopalko K, Kaczor P, Godlewski M and Gregorkiewicz T 1991 Acta Phys. Pol. A 80 345 Kopalko K, Kaczor P, Godlewski M and Gregorkiewicz T 1992 Acta Phys. Pol. A 82 677
25. Kaczor P, Godlewski M and Gregorkiewicz T 1994 Mater. Sci. Forum 143-47 1185
26. Itoh Y, Nozaki T, Masui T and Abe T 1985 Appl. Phys. Lett. 47 488
27. Markevich V P, Medvedeva I F and Murin L I 1996 Early Stages of Oxygen Precipitation in Silicon ed R Jones NATO ASI series 17, p 103
28. Fahy P M, Griffin P B and Plummer J D 1989 Rev. Mod. Phys. 61 289
29. Falster R, Pagani M, Gambaro D, Olmo M, Ferrero G C, Pichler P and Jacob M 1997 Solid State Phenomena Scitech Publications (GADEST '97) at press
30. Yang D, Fan R, Li L, Que D and Sumino K 1996 Appl. Phys. Lett. 68 487
31. Weber J and Bohne D I 1996 Early Stages of Oxygen Precipitation in Silicon ed R Jones (Dordrecht: Kluwer) NATO ASI series 17, p 123
32. Ewels C P, Jones R and Öberg S 1996 Early Stages of Oxygen Precipitation in Silicon ed R Jones (Dordrecht: Kluwer) NATO ASI series 17, p 141
33. Bean A R and Newman R C 1972 J. Phys. Chem. Solids 33 255
34. Bullough R, Newman R C and Wakefield J 1959 Proc. IEE 106B (suppl 15) 277