Shallow thermal donors in annealed CZ silicon and links to the NL10 EPR spectrum: The relevance of H, Al and N impurities

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 379-384

  Newman, R C ^a   Ashwin, M J ^a   Pritchard, R E ^a   Tucker, J H ^a   Lightowlers, E C ^b   Gregorkiewicz, T ^c   Zevenbergen, I S ^c   Ammerlaan, C A J ^c   Falster, R ^d   Binns, M J ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF AMSTERDAM   (Netherlands)

^d MEMC Electronic Materials Inc   (United States)

Author keywords

Electron paramagnetic resonance; Infrared absorption; Oxygen; Shallow thermal donors; Si

Indexed keywords

ABSORPTION; ALUMINUM; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; HYDROGENATION; IONIZATION OF SOLIDS; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING;

ELECTRONIC TRANSITIONS; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 3743148289     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.379     Document Type: Article

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