The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Huang, Y L ^a   Ma, Y ^a   Job, R ^a   Fahrner, W R ^a   Simoen, E ^b   Claeys, C ^b  

^a UNIVERSITY OF HAGEN   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI SILICON; POSTHYDROGENATION ANNEALING; SPREADING RESISTANCE; THERMAL DONOR FORMATION;

ANNEALING; BOUNDARY CONDITIONS; DIFFUSION; HYDROGENATION; OXYGEN; SILICON; THERMOANALYSIS;

HYDROGEN;

EID: 24044510168     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999035     Document Type: Article

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