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Volumn 58, Issue 1, 1999, Pages 91-94

Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HYDROGEN; ION IMPLANTATION;

HYDROGEN ENHANCED THERMAL DONOR FORMATION; SPREADING RESISTANCE PROBE (SRP) ANALYSIS;

SILICON WAFERS;

EID: 0345072497 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00290-6 Document Type: Article

Times cited : (10)

References (12)

1
- 0001566046
- A.R. Brown, M. Clayborn, R. Murray, P.S. Nandra, R.C. Newman, J.H. Tucker, Semicond. Sci. Technol. 3 (1988) 591.
- (1988) Semicond. Sci. Technol. , vol.3 , pp. 591
- Brown, A.R.¹ Clayborn, M.² Murray, R.³ Nandra, P.S.⁴ Newman, R.C.⁵ Tucker, J.H.⁶

2
- 0024753439
- R. Murray, A.R. Brown, R.C. Newman, Mater. Sci. Eng. B 4 (1990) 299.
- (1990) Mater. Sci. Eng. B , vol.4 , pp. 299
- Murray, R.¹ Brown, A.R.² Newman, R.C.³

3
- 36449004330
- R.C. Newman, J.H Tucker, A.R. Brown, S.A. McQuaid, J. Appl. Phys. 70 (1991) 3061.
- (1991) J. Appl. Phys. , vol.70 , pp. 3061
- Newman, R.C.¹ Tucker, J.H.² Brown, A.R.³ McQuaid, S.A.⁴

4
- 0002057644
- HJ. Stein, S.K. Hahn, Appl. Phys. Lett. 56 (1990) 63.
- (1990) Appl. Phys. Lett. , vol.56 , pp. 63
- Stein, H.J.¹ Hahn, S.K.²

5
- 5244246056
- HJ. Stein, S.K. Hahn, J. Appl. Phys 75 (1994) 3477.
- (1994) J. Appl. Phys , vol.75 , pp. 3477
- Stein, H.J.¹ Hahn, S.K.²

6
- 0000551480
- HJ. Stein, S.K. Hahn, J. Electrochem. Soc. 142 (1995) 1242.
- (1995) J. Electrochem. Soc. , vol.142 , pp. 1242
- Stein, H.J.¹ Hahn, S.K.²

7
- 16944366398
- A.G. Ulyashin, Y.A. Bumay, R. Job, G. Grabosh, D. Borchert, W.R. Fahrner, A.Y. Diduk, Solid State Phenom. 57-58 (1997) 189.
- (1997) Solid State Phenom. , vol.57-58 , pp. 189
- Ulyashin, A.G.¹ Bumay, Y.A.² Job, R.³ Grabosh, G.⁴ Borchert, D.⁵ Fahrner, W.R.⁶ Diduk, A.Y.⁷

8
- 0031334450
- R. Job, D. Borchert, Y.A. Bumay, W.R. Fahrner, G. Grabosh, I.A. Khorunzhii, A.G. Ulyashin, MRS Symp. Proc. Series 469 (1997) 101.
- (1997) MRS Symp. Proc. Series , vol.469 , pp. 101
- Job, R.¹ Borchert, D.² Bumay, Y.A.³ Fahrner, W.R.⁴ Grabosh, G.⁵ Khorunzhii, I.A.⁶ Ulyashin, A.G.⁷

9
- 0031384909
- A.G. Ulyashin, Y.A. Bumay, W.R. Fahrner, A.I. Ivan, R. Job, L. Palmetshofer, MRS Symp. Proc. Series 469 (1997) 95.
- (1997) MRS Symp. Proc. Series , vol.469 , pp. 95
- Ulyashin, A.G.¹ Bumay, Y.A.² Fahrner, W.R.³ Ivan, A.I.⁴ Job, R.⁵ Palmetshofer, L.⁶

10
- 0031377339
- R. Job, W.R. Fahrner, A.G. Ulyashin, Y.A. Bumay, A.I. Ivanov, L. Palmetshofer, Solid State Phenom. 57-58 (1997) 91.
- (1997) Solid State Phenom. , vol.57-58 , pp. 91
- Job, R.¹ Fahrner, W.R.² Ulyashin, A.G.³ Bumay, Y.A.⁴ Ivanov, A.I.⁵ Palmetshofer, L.⁶

11
- 0003864995
- Springer-Verlag, Berlin, Heidelberg, New York
- S.J. Pearton, J.W. Corbett, M. Stavola, Hydrogen in Crystalline Semiconductors, Springer-Verlag, Berlin, Heidelberg, New York, 1992.
- (1992) Hydrogen in Crystalline Semiconductors
- Pearton, S.J.¹ Corbett, J.W.² Stavola, M.³

12
- 0031621997
- R. Job, W.R. Fahrner, N.M. Kazuchits, A.G. Ulyashin, MRS Symp. Proc. Series 513 (1998) 337.
- (1998) MRS Symp. Proc. Series , vol.513 , pp. 337
- Job, R.¹ Fahrner, W.R.² Kazuchits, N.M.³ Ulyashin, A.G.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.