Low-temperature doping of P-type czochralski silicon due to hydrogen plasma enhanced thermal donor formation

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 189-194

  Ulyashin, A G ^a   Bumay, Yu A ^a   Job, R ^b   Grabosch, G ^b   Borchert, D ^b   Fahrner, W R ^b   Diduk, A Yu ^c  

^a BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^b UNIVERSITY OF HAGEN   (Germany)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

High energy implantation; Hydrogen and oxygen in silicon; Hydrogen diffusion; Hydrogen plasma; Thermal donors

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; HYDROGEN; HYDROGENATION; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; OXYGEN; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT; CAPACITANCE; DEFECTS; DIFFUSION BARRIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE;

HYDROGEN PLASMA ENHANCED THERMAL DONOR FORMATION;

SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

HIGH ENERGY IMPLANTATION; HYDROGEN DIFFUSION; HYDROGEN PLASMAS; OXYGEN IN SILICON; THERMAL DONOR;

EID: 16944366398     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.189     Document Type: Article

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