Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 176-181

  Nordmark, Heidi ^a   Ulyashin, Alexander ^b   Walmsley, John C ^a,c   Tøtdal, Bård ^a   Holmestad, Randi ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF OSLO   (Norway)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

Author keywords

AFM; Hydrogen; Silicon; TEM

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; HYDROGEN; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLOGRAPHIC PLANES; CZOCHRALSKI SILICON; N-TYPE MATERIALS; P-TYPE MATERIAL;

CRYSTAL DEFECTS;

EID: 33751340890     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.043     Document Type: Article

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