Two-step low-temperature process for a p-n junction formation due to hydrogen enhanced thermal donor formation in p-type Czochralski silicon

Materials Research Society Symposium - Proceedings

Volumn 513, Issue , 1998, Pages 337-342

  Job, R ^a   Fahrner, W R ^a   Kazuchits, N M ^a   Ulyashin, A G ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; HYDROGEN; HYDROGENATION; LOW TEMPERATURE OPERATIONS; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

HYDROGEN ENHANCED THERMAL DONOR FORMATION; LIGHT BEAM INDUCED CURRENT (LBIC); SPREADING RESISTANCE PROBE (SRP);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031621997     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)