Conversion of Czochralski silicon from p-type to n-type by hydrogen plasma enhanced thermal donor formation

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 101-106

  Job, R ^a   Borchert, D ^a   Bumay, Y A ^a   Fahrner, W R ^a   Grabosch, G ^a   Khorunzhii, I A ^a   Ulyashin, A G ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTAL GROWTH FROM MELT; PLASMA APPLICATIONS; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

HALL MEASUREMENT; HYDROGEN PLASMA ENHANCED THERMAL DONOR FORMATION; SPREADING RESISTANCE PROBE (SRP);

SEMICONDUCTING SILICON;

EID: 0031334450     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-101     Document Type: Conference Paper

References (20)