Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1842-1844

  Simoen, E ^a   Claeys, C ^a   Job, R ^b   Ulyashin, A G ^b   Fahrner, W R ^b   De Gryse, O ^c   Clauws, P ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF HAGEN   (Germany)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION PROFILES; DOPING CONCENTRATION; FASTER RATES; FLOAT ZONE SILICON; OXYGEN THERMAL DONORS; OXYGEN-DOPED; PLASMA HYDROGENATION; SAMPLE THICKNESS; SPECTROSCOPIC TECHNIQUE; THERMAL DONOR; THERMAL DONOR FORMATION;

HYDROGEN; HYDROGENATION;

OXYGEN;

EID: 79955993351     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504487     Document Type: Article

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