Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Philosophical Magazine

Volumn 86, Issue 32, 2006, Pages 5137-5151

  Ghica, C ^a   Nistor, L C ^a   Bender, H ^b   Richard, O ^b   Van Tendeloo, G ^c   Ulyashin, A ^d  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b IMEC   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

^d UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HYDROGEN; IMAGE PROCESSING; PLASMA APPLICATIONS; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-RESOLUTION IMAGE SIMULATION; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); HYDROGEN PLASMA TREATMENTS; PLANAR DEFECTS;

DEFECTS;

EID: 33746875624     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430600801443     Document Type: Article

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