Doping of oxidized float zone silicon by thermal donors - A low thermal budget doping method for device applications?

Materials Research Society Symposium - Proceedings

Volumn 719, Issue , 2002, Pages 257-262

  Job, R ^a   Ulyashin, A G ^a   Huang, Y L ^a   Fahrner, W R ^a   Simoen, E ^b   Claeys, C ^b,c   Niedernostheide, F J ^d   Schulze, H J ^d   Tonelli, G ^e  

^a UNIVERSITY OF HAGEN   (Germany)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e IFN   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HYDROGENATION; OXYGEN; PLASMAS; RADIATION DETECTORS; SUBSTRATES; THERMAL EFFECTS;

THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0036449872     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-719-f9.5     Document Type: Conference Paper

References (21)

1. R. Job, D. Borchert, Y.A. Bumay, W.R. Fahrner, G. Grabosch, I.A. Khorunzhii, A.G. Ulyashin, MRS Symp. Proc. Series 469, 101 (1997).
2. A.G. Ulyashin, Y.A. Bumay, R. Job, G. Grabosch, D. Borchert, W.R. Fahrner, A.Y. Diduk, Solid State Phenomena 57-58, 189 (1997).
3. R. Job, W.R. Fahrner, N.N. Kazuchits, A.G. Ulyashin, MRS Symp. Proc. Series 513, 337 (1998).
4. A.G. Ulyashin, Y.A. Bumay, R. Job, W.R. Fahrner, Appl. Phys. A 66, 399 (1998).
5. R. Job, A.G. Ulyashin, W.R. Fahrner, V.P. Markevich, L.I. Murin, J.L. Lindström, V. Raiko, J. Engemann, in: High Purity Silicon VI, Electrochem. Soc. Proc. 2000-17, 209 (2000).
6. th Int. Workshop on the Physics of Semicond. Devices (IWPDS '2001), p. 405 (2002).
7. R. Job, W.R. Fahrner, A.G. Ulyashin, Mater. Sci. Engineer. B 73, 197 (2000).
8. A. Ruzin, G. Casse, M. Glaser, F. Lemeilleur, Nucl. Instr. and Meth. in Phys. Res. A 426, 94 (1999).
9. A. Ruzin, G. Casse, M. Glaser, F. Lemeilleur, R. Talamonti, S. Watts, A. Zanet, Nucl. Phys. B (Proc. Suppl.) 78, 645 (1999).
10. B. Dezillie, Z. Li, V. Eremin, W. Chen, L.J. Zhao, IEEE Trans. Nucl. Sci. 47, 1892 (2000).
11. R. Job, A.G. Ulyashin, W.R. Fahrner, E. Simoen, C. Claeys, G. Tonelli, Nucl. Instr. and Meth. B 186, 116 (2002).
12. J. Hartung, J. Weber, Phys. Rev. B 48, 14161 (1993).
13. S.A. McQuaid, R.C. Newman, E.C. Lightowlers, Semicond. Sci. Technol. 9, 1736 (1994).
14. V.P. Markevich, M. Suezawa, K. Sumino, L.I. Murin, J. Appl. Phys. 76, 7347 (1994).
15. Yu.V. Martynov, T. Gregorkiewicz, C.A.J. Ammerlaan, Phys. Rev. Lett. 74, 2030 (1995).
16. H.J. Stein, J.W. Medernach, J. Appl. Phys. 79, 2337 (1996).
17. R.C. Newman, J.H. Tucker, N.G. Semaltianos, E.C. Lightowlers, T. Gregorkiewicz, I.S. Zevenbergen, C.A.J. Ammerlaan, Phys. Rev. B 54, R6803 (1996).
18. Y. Tokuda, A. Ito, H. Ohshima, Semicond. Sci. Technol. 13, 194 (1998).
19. Yu.V. Gorelkinskii, N.N. Nevinnyi, K.A. Abdullin, J. Appl. Phys. 84, 4847 (1998).
20. R.C. Newman, M.J. Ashwin, R.E. Pritchard, J.H. Tucker, phys. stat. sol. (b) 210, 519 (1998).
21. V.V. Voronkov, M. Porrini, P. Collareta, M.G. Pretto, R. Scala, R. Falster, G.I. Voronkova, A.V. Batunina, V.N. Golovina, L.V. Arapkina, A.S. Guliaeva, M.G. Milvidski, J. Appl, Phys. 89, 4289 (2001).