n-p Junction formation in p-type silicon by hydrogen ion implantation

Solar Energy Materials and Solar Cells

Volumn 72, Issue 1-4, 2002, Pages 285-290

  Barakel, D ^a   Ulyashin, A ^b   Perichaud I ^a   Martinuzzi, S ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b UNIVERSITY OF HAGEN   (Germany)

Author keywords

Hydrogen; Ion implantation; n p junction; Plasma; Silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

HYDROGEN ION IMPLANTATION;

SILICON WAFERS;

EID: 0036533164     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00176-3     Document Type: Conference Paper

References (7)