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EPJ Applied Physics

Volumn 23, Issue 1, 2003, Pages 25-32

μ-Raman investigations of plasma hydrogenated silicon

(5) Job, R a Ulyashin, A G a Fahrner, W R a Beaufort, M F b Barbot, J F b

a UNIVERSITY OF HAGEN (Germany)

b UNIVERSITÉ DE POITIERS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HYDROGENATION; PLASMAS; RAMAN SPECTROSCOPY; REACTION KINETICS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

CROSS TRANSMISSION ELECTRON MICROSCOPY; PLASMA HYDROGENATED SILICON;

SEMICONDUCTING SILICON;

EID: 0037770346 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2003013 Document Type: Article

Times cited : (29)

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