Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 167-170

  Nielsen, K Bonde ^a   Dobaczewski, L ^b   Goscinski, K ^b   Bendesen, R ^a   Andersen, Ole ^a   Nielsen, B Bech ^a  

^a AARHUS UNIVERSITY   (Denmark)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON SPIN RESONANCE SPECTROSCOPY; HELIUM; HYDROGEN; ION IMPLANTATION;

LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0343517567     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00437-8     Document Type: Article

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