Oxygen gettering and thermal donor formation at post-implantation annealing of hydrogen implanted Czochralski silicon

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 95-100

  Ulyashin, A G ^a   Bumay, Yu A ^a   Fahrner, W R ^a   Ivanov, A I ^a   Job, R ^a   Palmetshofer, L ^a  

^a BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGEN; ION IMPLANTATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY;

OXYGEN GETTERING; SPREADING RESISTANCE PROBE (SRP); THERMAL DONOR FORMATION;

SEMICONDUCTING SILICON;

EID: 0031384909     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-95     Document Type: Conference Paper

References (16)