Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7080-7086

  Huang, Y L ^a   Ma, Y ^a   Job, R ^a   Ulyashin, A G ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATALYSIS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); HYDROGEN; HYDROGENATION; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

CZOCHRALSKI SILICON; SPREADING RESISTANCE PROBE (SRP) ANALYSIS; THERMAL DONOR (TD) FORMULATIONS; THERMAL DOUBLE DONORS (TDD);

DIFFUSION;

EID: 11044224582     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812379     Document Type: Article

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