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Applied Physics A: Materials Science and Processing

Volumn 66, Issue 4, 1998, Pages 399-402

Formation of deep p-n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment

(4) Ulyashin, A G a Bumay, Y A a Job, R b Fahrner, W R b

a BELARUSIAN NATIONAL TECHNICAL UNIVERSITY (Belarus)

b UNIVERSITY OF HAGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL GROWTH FROM MELT; ELECTRIC RESISTANCE MEASUREMENT; HYDROGEN; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

PLASMA ENHANCED THERMAL DONOR FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0032048659 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050684 Document Type: Article

Times cited : (35)

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