Low temperature diffusion of impurities in hydrogen implanted silicon

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Personnic, S ^a   Bourdelle, K K ^a   Letertre, F ^a   Tauzin, A ^b   Laugier, F ^b   Fortunier, R ^c   Klocker, H ^c  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA LETI   (France)

^c ECOLE DES MINES DE SAINT ETIENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; HYDROGEN; IMPURITIES; ION IMPLANTATION; MASS SPECTROMETRY; MEASUREMENT THEORY;

HYDROGEN IMPLANTATION; IMPURITY PROFILE ENGINEERING; ISOTHERMAL ANNEALS;

SILICON;

EID: 34247609866     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721772     Document Type: Conference Paper

References (19)

1. M. Bruel, Electron. Lett. 0013-5194 10.1049/el:19950805 31, 1201 (1995).
2. N. M. Johnson, F. A. Ponce, R. A. Street, and R. J. Nemanich, Phys. Rev. B 0163-1829 10.1103/PhysRevB.35.4166 35, 4166 (1987).
3. F. Shimura, Oxygen in Silicon (Academic, New York, 1994).
4. J. C. Mikkelsen, Jr., Mater. Res. Soc. Symp. Proc. 59, 19 (1986).
5. S. Senkader, P. R. Wilshaw, and R. J. Falster, J. Appl. Phys. 0021-8979 10.1063/1.1359424 89, 4803 (2001).
6. Y. J. Lee, J. von Boehm, M. Pesola, and R. M. Nieminen, Phys. Rev. Lett. 86, 3060 (2001).
7. A. Ourmazd, W. Schröter, and A. Bourret, J. Appl. Phys. 0021-8979 10.1063/1.334156 56, 1670 (1984).
8. R. C. Newman, J. H. Tucker, A. R. Brown, and S. A. McQuaid, J. Appl. Phys. 0021-8979 10.1063/1.349338 70, 3061 (1991).
9. S. K. Estreicher, Phys. Rev. B 0163-1829 10.1103/PhysRevB.41.9886 41, 9886 (1990).
10. R. Jones, S. Öberg, and A. Umerski, Mater. Sci. Forum 83-87, 551 (1991).
11. Y. L. Huang, Y. Ma, R. Job, W. R. Fahrner, E. Simoen, and C. Claeys, J. Appl. Phys. 0021-8979 10.1063/1.1999035 98, 033511 (2005).
12. S. Personnic, AIP Conf. Proc. 866, 65 (2006).
13. J. M. Andrews, in Defects in Silicon, edited by, W. M. Bullis, and, L. C. Kimerling, (The Electrochemical Society, Pennington, NJ, 1993), p. 143.
14. L. Zhong and F. Shimura, J. Appl. Phys. 0021-8979 10.1063/1.353326 73, 707 (1993).
15. H. J. Stein and S. K. Hahn, J. Electrochem. Soc. 0013-4651 10.1149/1.2044159 142, 1242 (1995).
16. P. L. Grunzin, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 7, 1853 (1973).
17. G. R. Nash, J. F. W. Schiz, C. D. Marsh, P. Ashburn, and G. R. Booker, Appl. Phys. Lett. 0003-6951 10.1063/1.125424 75, 3671 (1999).
18. Cs. Szeles, B. Nielsen, P. Asoka-Kumar, K. G. Lynn, M. Anderle, T. P. Ma, and G. W. Rubloff, J. Appl. Phys. 0021-8979 10.1063/1.357470 76, 3403 (1994).
19. S. P. Jeng, T. P. Ma, R. Canteri, and M. Anderle, Appl. Phys. Lett. 0003-6951 10.1063/1.107575 61, 1310 (1992).