Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 124-129

  Ulyashin, A G ^a   Khorunzhii, I A ^a   Job, R ^b   Fahrner, W R ^b  

^a BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^b UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; HYDROGEN; HYDROGENATION; MATHEMATICAL MODELS; OXYGEN; VOLTAGE MEASUREMENT;

DENUDED ZONE; SPREADING RESISTANCE PROBE ANALYSIS; THERMAL DONOR;

SILICON WAFERS;

EID: 0033900702     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00447-X     Document Type: Article

References (21)

1. F. Shimura (Ed.), Oxygen in Silicon, Academic Press, New York, 1994.
2. Kaiser W., Frisch H.L., Reiss H. Phys. Rev. 112:1958;1546.
3. Londos C.A., Binns M.J., Brown A.R., McQuaid S.A., Newman R.C. Appl. Phys. Lett. 62:1993;1525.
4. Filangeri E.M., Nishida T. J. Appl. Phys. 75:1994;7931.
5. Brown A.R., Clayborn M., Murray R., Nandra P.S., Newman R.C., Tucker J.H. Semicond. Sci. Technol. 3:1988;591.
6. Murray R., Brown A.R., Newman R.C. Mater. Sci. Eng. B. 4:1990;299.
7. Newman R.C., Tucker J.H., Brown A.R., McQuaid S.A. J. Appl. Phys. 70:1991;3061.
8. Stein H.J., Hahn S.K. Appl. Phys. Lett. 56:1990;63.
9. Stein H.J., Hahn S.K. J. Appl. Phys. 75:1994;3477.
10. Stein H.J., Hahn S.K. J. Electrochem. Soc. 142:1995;1242.
11. Ulyashin A.G., Bumay Y.A., Job R., Grabosh G., Borchert D., Fahrner W.R., Diduk A.Y. Solid State Phenom. 57-58:1997;189.
12. Job R., Borchert D., Bumay Y.A., Fahrner W.R., Grabosh G., Khorunzhii I.A., Ulyashin A.G. MRS Symp. Proc. Ser. 469:1997;101.
13. Ulyashin A.G., Bumay Y.A., Job R., Fahrner W.R. Appl. Phys. (A). 66:1998;399.
14. Job R., Fahrner W.R., Kazuchits N.M., Ulyashin A.G. MRS Symp. Ser. 513:1998;337.
15. Ulyashin A.G., Petlitskii A.N., Job R., Fahrner W.R. Electrochem. Soc. Proc. 98-13:1998;425.
16. Pearton S.J., Corbett J.W., Stavola M. Hydrogen in Crystalline Semiconductors. 1992;Springer-Verlag, Berlin.
17. Borenstein J.T., Corbett J.W., Pearton S.J. J. Appl. Phys. 73:1993;2751.
18. Mathiot D. Phys. Rev. B. 40:1989;5867.
19. van Wieringen A., Warmoltz N. Physica. 22:1956;849.
20. Ruitz H.J., Pollack G.P. J. Electrochem. Soc. 125:1978;128.
21. Miccelsen J.C. Mikkelsen J.C., Pearton S.J., Corbett J.W., Pennycook S.J. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. 1986;19 Materials Research Society, Pittsburg.