Substrates for epitaxy of gallium nitride: New materials and techniques

Reviews on Advanced Materials Science

Volumn 17, Issue 1-2, 2008, Pages 1-32

  Kukushkin, S A ^a   Osipov, A V ^a   Bessolov, V N ^b   Medvedev, B K ^c   Nevolin, V K ^c   Tcarik, K A ^c  

^a INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITRIDES; POROUS SILICON; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SUBSTRATES;

DISLOCATION FORMATION; GAN LAYERS; GAS-PHASE; NEW APPROACHES; NEW MATERIALS; POROUS SI; SI SUBSTRATES;

GALLIUM ALLOYS;

EID: 48549087366     PISSN: 16065131     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (125)

1. S.D. Lester, F.A. Ponce, M.G. Craford and D.A. Steigerwald // Appl. Phys. Lett. 66 (1995) 1249.
2. F.A. Ponce, In: Group /// Nitride Semiconductor Compounds, ed. by B. Gil (Oxford University Press, Oxford, 1998) p. 123.
3. E.V. Etzkorn and D.R. Clarke // J. Appl. Phys. 89 (2001) 1025.
4. S.J. Pearton, F. Ren, A.P. Zhang and K.P. Lee // Mater. Sci. Eng. Rep. R30 (2000) 55.
5. T. Miyajima, T. Tojyo and T. Asano // J. Phys. Cond. Matter 13 (2001) 7099.
6. R. Dimitrov, M. Murphy and J. Smart // J. Appl. Phys. 87 (2000) 3375.
7. A. Fissel // Phys. Rep. 379 (2003) 149.
8. M. Leszczynski, T. Suski and H. Teisseyre // J. Appl. Phys. 76 (1994) 4909.
9. H. Amano, M. Iwaya and T. Kashima // Jpn. J. Appl. Phys. 37 (1998) L1540.
10. B. Beaumont, Ph. Vennegures and P. Gibart // Phys. Stat. Sol. (b) 27 (2001) 1.
11. T.S. Zheleva, S.A. Smith and D.B. Thomson // J. Electron. Mater. 28 (1999) L5.
12. H. Lahreche, P. Vennegues, B. Beaumont and P. Gibart // J. Cryst. Growth 205 (1999) 245.
13. C.I.H. Ashby, C.C. Mitchell and J. Han // Appl. Phys. Lett. 77 (2000) 3233.
14. T Detchprohm, M. Yano and S. Sano // J. Appl. Phys. 76 (1994) 4909.
15. L.Liu and J.H.Edgar // Mater.Sci.Eng.R 37 (2002) 61.
16. V. K. Nevolin, Probe nanotechnologes in electronics (Moscow, Technosfera, 2006), in Russian.
17. M.P.Shaskolskaya, Crystallography (Moscow, Vuischaya Shkola, 1984), in Russian.
18. R.Z. Bakhtizin // Light Emitting Diodes 1 (2002) 77, in Russian.
19. R.Z. Bakhtizin Light Emitting Diodes 1 (2002) 76, in Russian.
20. H. Okumura, K. Ohta and G. Feuillet // J. Cryst Growth 178 (1997) 113.
21. E. Calleja, M.A. Sanchez-Garcia and F.J. Sanchez // J. Cryst Growth 201/202 (1999) 296.
22. D.M. Follstaedt, J. Han, P. Provencio and J.G. Fleming // MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.72.
23. Y.T. Rebane, YG. Shreter and W.N. Wang // Appl. Surf. Solidi (a) 166 (2000) 300.
24. V.I. Trofimov, B.K. Medvedev, V.G. Mokerov and A.G. Shumynkov // Proceeding of the Russian Academy of Sciences 347 (1996) 469.
25. V.I. Trofimov, B.K. Medvedev, V.G. Mokerov and A.G. Shumynkov // Materials Research Society, Symposium Proceeding 399 (Boston, USA, 1995) p. 47.
26. B.K. Medvedev, V.G. Mokerov and N.V. Peskov // Technical Physics Letter 20 (1994) 20.
27. A. Koukitu, J. Kikuchi, Y.Kangawa and Y.Kumagai // J. Crystal Growth 281 (2005) 47.
28. V.N.Bessolov, Yu.V. Zhilyaev and H.S.Park, Method of manufacture of epitaxial GaN layer on Si, Applied patent N2006127075 date 25.07.2006.
29. H.P. Maruska and J.J.Tietjen // Appl. Phys. Lett. 15 (1969) 327.
30. R. Dingle, K.L. Shakla, R.F.Leheny and R.B.Zetterstrom // Appl. Phys. Lett. 19 (1971) 5.
31. J.I. Pankove and J. Lumin // Appl. Phys. Lett. 4 (1971) 63.
32. Y. Ohki // Inst. Phys. Conf. Ser. 63 (1981) 479.
33. H. Amano, N.Sawaki, I.Akasaki and Y.Toyoda // Appl. Phys. Lett. 48 (1986) 353.
34. H. Amano // J. Appl. Phys. 29 (1990) L205.
35. H. Amano // J. Electrochem. Soc. 137 (1990) 1639.
36. H. Amano // Mater. Res. Soc. Ext. Abstr. EA-21 (1990) 165.
37. H. Murakami // J. Crystal Growth 115 (1991) 648.
38. S. Nakamura // Jpn. J. Appl. Phys. 36 (1997) L1568.
39. S. Nagahama // Jpn. J. Appl. Phys. 39 (2000) L647.
40. S.Nakamura and G.Fasol, The blue laser diodes (Berlin: Springer, 1998).
41. Y.Morkoc, Wide band gap nitrides and devices (Berlin: Springer, 1998).
42. Yu.G.Sreter, Yu.T.Rebane, V.A.Zukov and V.G.Sidorov, Wide band gap semiconductors (S-Petersburg, 2001).
43. I.Akasaki // J. Cryst. Growth 300 (2007) 2.
44. S.-N.Lee, S.Y.Cho, H.Y.Ryu, J.K.Son, H.S.Paek, T.Sakong, T.Jang, K.K.Choi, K.H.Ha, M.H.Yang, O.H.Nam and Y.Park // Appl. Phys. Lett. 88 (2006) 111101.
45. C.-F.Lin, J.H.Zheng, Z.-J.Yang, J.-J.Dai, D.-Y.Lin, C.-Y.Chang, Z.X.Lai and C.S.Hong // Appl. Phys. Lett. 88 (2006) 083121.
46. K.H.Kim, K.S.Jang, S.L.Hwang, H.S.Jeon, W.J.Choi, M.Yang, H.S.Ahn, S.W.Kim, Y.Honda, M.Yamaguchi, N.Sawaki, J.Yoo, S.M.Lee and M.Koike // Phys. Stat. Solidi. 4 (2007) 29.
47. Z.Ren, Q.Sun, S.-Y.Kwon, J.Han, K.Davitt, Y.K.Song, A.V.Nurmikko, W.Liu, J.Smart and L. Schowalter // Phys. Stat. Solidi. 4 (2007) 2482.
48. T.Palacios, L.Shen, S.Keller, A.Chakraborty, S.Heikman, S.P.DenBaars and U.K.Mishra // Appl. Phys. Lett. 89 (2006) 073508.
49. Y.Taniyasu, M.Kasu and T.Makimoto // Nature 441 (2006) 325.
50. G.H.Jessen, J.K.Gillespie, G.D.Via, A.Crespo, D.Langley, M.E.Aumer, C.S.Ward, H.G.Henry, D.B.Thomson and D.P.Partlow // IEEE Electron. Dev. Lett. 28 (2007) 354.
51. J.H.Kim and P.H.Holloway // Adv, Mater. 17 (2005) 91.
52. F. Bernardini V.Fiorentini and D.Vanderbilt // Phys. Rev. B 56 (1997) R10024.
53. P.Waltereit, O.Brandt, A.Trampert, H.T.Grahn, J.Menniger, M.Ramsteiner, M.Reiche and K.H.Ploog // Nature 406 (2000) 865.
54. Y. J. Sun, O. Brandt, S. Cronenberg, S. Dhar, H. T Grahn, K. H. Ploog, P. Waltereit and J. S. Speck // Phys. Rev. B 67 (2003) 041306.
55. N.M. Ng // Appl. Phys. Lett. 80 (2002) 4369.
56. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang and M. Asif Khan // Appl. Phys. Lett. 84 (2004) 3663.
57. P.R. Taverni, B.Imer, S.P.DenBaars and D.R.Clarke // Appl. Phys. Lett. 85 (2004) 4630.
58. Growth of planar non-polar {1-100} m-plane GaN with MOCVD, US Patent 20060270087, May 31 2006.
59. Defect reduction of non-polar and semi-polar III-nitrides with sidwall lateral epitaxial overgrowth (SLEO), US Patent 20060270076, May 31 2006.
60. A. Benjamin // J. of Electron. Mater. 34 (2005) 367.
61. B.A. Haskell // APL 86 (2005) 111917.
62. D.F.Feezell, M.C.Schmidt, R.M.Farrell, K.-C.Kim, M.Sakato, K. Fujito, D.A.Cohen, J.S.Speck, S.P.DenBaars and S.Nakamura // Jap. Journ. Appl. Phys. 46 (2007) L284.
63. M.C.Schmidt, K.-C.Kim, R.M.Farrell, D.F.Feezell, D.A. Cohen, M.Saito, K.Fujito, J.S.Speck, S.P.DenBaars and S.Nakamura // Jap. Journ. Appl. Phys. 46 (2007) L190.
64. K. Iso, H. Yamada, H.Hirasawa, N. Fellows, M. Saito, K., S. P. DenBaars, J. S. Speck and S. Nakamura // Jap.Journ. Appl. Phys. 46(2007) L960.
65. J.H.Song, Y.Z.Yoo, K.Nakajima, T.Chikyow, T.Sekiguchi and H.Koinuma // J.Appl.Phys. 97 (2005) 043531.
66. A.Nashimoto, Y.Asiba, T.Motizuki, M.Ohkubo and A.Yamamoto // J.Cryst.Growth. 175/176 (1997) 129.
67. F.Yun, Y.-T. Moon, Y.Fu.K.Zhu, U.Ozgur and H.Morkoc // J.Appl.Phys. 98 (2005) 123502.
68. A. Dadgar// IPAP conference Series 1 (2000) 845.
69. P. Chen // J. Cryst. Growth. 225 (2001) 150.
70. K.H.Lee, M.H.Hong, K.Teker, C.Jacob and P.Pirouz // Mater.Res.Soc.Symp.Proc. (Pittsburgh: MRS) 622 (2000) p. 72.
71. X.Xu, R.Armitage, S.Shinkai, K.Sasaki, C.Kisielowski and E.R.Weber // Appl.Phys.Lett. 86 (2005) 182104.
72. J.Tolle, J.Konvetakis, D.-W. Kim, S. Mahajan, A.Bell, F.A.Ponce, I.S.T. Tsong, M.L.Kottke and Z.D.Chen // Appl.Phys.Lett. 84 (2004) 3510.
73. H.W.Kim and N.H.Kim // Appl. Surf. Sci. 236 (2004) 192.
74. Y.Wu, X.Han, J.Li, D.Li, Y.Lu, H.Wei, G.Cong, X.Liu, Q.Zhu and Z.Wan // J. Crystal Growth. 279 (2005) 335.
75. W.-Y. Uen, Z.,-Y.Li, S.-M. Lan and S.-M. Liao // J. Crystal Growth 280 (2005) 335.
76. N.H.Zhang, X.L.Wang, Y.P.Zeng, H.L.Xiao, J.X.Wang, H.X.Liu and J.M.Li // J. Crystal Growth 280 (2005) 346.
77. A.J.Steckl, J.Devrajan, C. Tran and R.A.Stall // Appl. Phys. Lett. 69 (1996) 2264.
78. J.Komiyama, Y. Abe, S. Suzuki and H. Nakanishi // Appl.Phys.Lett. 88 (2006) 091901.
79. A. Dadgar // Appl.Phys.Lett. 78 (2001) 2211.
80. A.Krost and A.Dadgar // Phys.Status.Solidi (a). 194 (2002) 361.
81. S.Radhavan and J.M.Redwing // J. Appl.Phys. 98 (2005) 023514.
82. W.G.Perry // Mater.Res.Soc. Symp.Propc. 415 (1997) 3.
83. J. E. Nortrup and J. Neugebauer // Phys. Rev. B 53 (1996) R10477.
84. M.D.Drory, J.W.Ager III, T.Suski, I.Grzegory and S.Porowski // Appl.Phys.Lett. 69 (1996) 4044.
85. P.R.Tavernier, P.M.Verghese and D.R.Clarke // Appl.Phys.Lett. 74 (1999) 2678.
86. E.V.Etzkorn and D.R.Clarke // J.Appl.Phys. 89 (2001)1025.
87. E.Feltin, B.Beaumont, P.Vennegues, T.Riemann, J.Christen, J.P.Faurite and P.Gibart // Phys. Stat. solidi (a). 188 (2001) 531.
88. S.Zamir, B.Meyler and J.Salzman // Appl.Phys.Lett. 78 (2001) 288.
89. K.-J. Kim and C.-R. Lee // J.Korean Physical Soc. 46 (2005) 901.
90. N.H.Zhang, X.L.Wang, Y.P.Zeng, H.L.Xiao, J.X.Wang, H.X.Liu and J.M.Li // J.Phys.D: Appl.Phys. 38 (2005) 1888.
91. D.Wang, M.Ichikawa and S.Yoshida // Appl.Phys.Lett. 80 (2002) 2472.
92. D.Wang, Y.Hiroyama, M.Tamura, M.Ichikawa and S.Yoshida // Appl. Phys. Lett. 77 (2000) 1846.
93. A.Dadgar, C.Hums, A.Diez, J.Blasing and A.Krost // J.Cryst. Growth. 297 (2006) 279.
94. K.L.Lin // Tech. program.Intern.Cohfer.Nitrid. Semic., September 2007, USA, TP85.
95. V.N.Bessolov, V.Yu.Davydov, Yu.V.Zhilyaev, E.V.Konenkova, G.N.Mosina, S.D.Raevskii, S.N.Rodin, Sh.Sharofidinov, M.P.Shcheglov, Hee Seok Park and M.Koike // Technical Physics Letter 31 (2005) 915.
96. J.X.Zhang, Y.Qu, Y.Z.Chen, A.Uddin and S.Yuan // J.Cryst. Growth 82 (2005) 137.
97. K.J.Lee, E.H.Shin, S.K.Shim, T.K.Kim, G.M.Yang and K.Y.Lim // Phys.stat.sol. C 2 (2005) 2104.
98. E.Tuomisto, T.Paskova, R.Kroger, S.Figge, D.Hommel, B.Monemar and R.Kersting // Appl.Phys.Lett. 90 (2007) 121915.
99. A.Vescan, J.D. Brown J.W. Johnson, R. Therrien, T. Gehrke, P. Rajagopal, J.C. Roberts, S. Singhal, W. Nagy and R. Borges // Phys. Stat. Sol.(c) 20 (2002) 52.
100. S.Arulkumaran, T.Egawa, S.Matsui and H.Ishikawa // Appl.Phys.Lett. 86 (2005) 123503.
101. F.Semond, P.Lorenzini, N.Grandjean and J.Massies // Appl.Phys.Lett. 78 (2001) 335.
102. J.Schalwiga, G.Muller, U.Karrer, M.Eickhoff, O.Ambacher, M.Stutzmann, L.Gorgens and G.Dollinger // Appl.Phys.Lett. 80 (2002) 1222.
103. J.S.Thakur, H.E.Prakesam, L.Zhang, E.F.McCullen, L.Rinai, V.M.Garcia-Snarez, R.Naik, K.Y.S.Ng and G.W.Auner // Phys.Rev.B 75 (2007) 075308.
104. S.Guna and N.A.Bojarczuk // Appl.Phys.Lett. 72 (1998) 415.
105. C.A.Tran, A.Osinski, R.F.Karlichek and I.Berishev // Appl.Phys.Lett. 75 (1999) 1494.
106. F.Schulze, A.Dadgar, F.Berttram, J.Blasing, A.Diez, P.Veit, R.Cios, J.Christen and A. Krost // Phys.Stat.Solidi. 4 (2007) 41.
107. Z.Ye, X.Gu J.Huang, Y.Wang, Q.Shao and B.Zhao // Intern.J.Modern.Physics B 16 (2002) 4310.
108. S-J.Park, H-B.Lee, W.L.Shan, S-J.Chua, J.-H. Lee and S-H.Hahm // Phys.stat.solidi. 2 (2005) 2559.
109. X.Wang, X.Wang, B.Wang, H.Xiao, H.Liu, J.Wang, Y.Zeng and J.Li // Phys.stat.solidi. 4 (2007) 1613.
110. Y. Khlebnikov, I. Khlebnikov, M. Parker and T.S. Sudarshan // J. Cryst. Growth. 233 (2001) 112.
111. A.R. Bushroa, C. Jacoba, H. Saijoa and S. Nishino // J. Cryst. Growth 271 (2004) 200.
112. S. A. Kukushkin, A. V. Osipov, V. P. Rubets, S. K. Gordeev and S. B. Korchagina // Technical Physics Letters 31 (2005). 859.
113. A. P. Belyaev, S. A. Kukushkin, A. V. Osipov, V. P. Rubets, S. K. Gordeev and S. B. Korchagina // Technical Physics Letters 32 (2006) 414.
114. S. K. Gordeev, S. B. Korchagina, S. A. Kukushkin and A. V. Osipov, RF Patent Appl. No. 2286616 (October 2006, 27).
115. S. K. Gordeev, S. B. Korchagina, S. A. Kukushkin and A. V. Osipov, RF Patent Appl. No. 2286617 (October 2006, 27).
116. S. A. Kukushkin and A. V. Osipov, Nano silicon carbide on silicon: new material for opto- and micro-electronics. Bureau of meeting of Energetics, Mechanical Engineering, Mechanics and Controlling Processes Section of Russian Academy of Sciences (Resolution N 62 from 27.06.2006).
117. S. A. Kukushkin and A. V Osipov // Physics of the Solid State 50 (2008), in print.
118. I. G. Aksyanov // Technical Physics Letters (2008), in print.
119. V. N. Bessolov // Technical Physics Letters 32 (2006) 60.
120. S.Nishino, J.A. Powell and H.A. Will // Appl.Phys.Lett. 42 (1983) 460.
121. E. Bustarret, D. Vobornik, A. Roulot, T. Chassagne, G. Ferro, Y. Monteil, E. Martinez-Guerrero, H. Mariette, B. Daudin and Le Si Dang // Phys.stat.sol. (a) 195 (2003) 18.
122. M. G. Mynbaeva // Technical Physics Letters 32 (2006) 25.
123. J.X. Zhang, Y. Qu, Y.Z. Chen, A. Uddin and Shu Yuan // J. Cryst. Growth. 282 (2005) 137.
124. A. Yamamoto, T. Yamauchi, T. Tanikawa, M. Sasase, B.K. Ghosh, A. Hashimoto and Y. Ito // J. Cryst. Growth 261 (2004) 266.
125. M. Kuball, J.M.Hayesw, A.D.Prins, N.W.A. van Uden, D.J.Dunstan, Y.Shi and J. H. Edgar // Appl. Phys. Lett. 78 (2001) 724.