Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 129-133

  Hashimoto, Akihiro ^a   Aiba, Yoshitaka ^a   Motizuki, Takanori ^a   Ohkubo, Mitugu ^a   Yamamoto, Akio ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

Alternating source supply; Dimethyl hydrazine; GaN on Si; Initial growth stage

Indexed keywords

ATOMIC FORCE MICROSCOPY; HYDRAZINE; MORPHOLOGY; NITRIDING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIMETHYL HYDRAZINE; GALLIUM NITRIDE; STRANSKI KRASTANOV GROWTH; SUPPRESSION EFFECT;

SEMICONDUCTING FILMS;

EID: 0031144970     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00979-7     Document Type: Article

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