AlGaN/GaN HFETs on 100 mm silicon substrates for commercial wireless applications

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 52-56

  Vescan, A ^a   J d Brown, ^a   J w Johnson, ^a   Therrien, R ^a   Gehrke, T ^a   Rajagopal, P ^a   Roberts, J C ^a   Singhal, S ^a   Nagy, W ^a   Borges, R ^a   Piner, E ^a   Linthicum, K ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; NITRIDES; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HFETS; ELECTRICAL CHARACTERISTIC; FABRICATED DEVICE; HIGH VOLUME MANUFACTURING; POWER DENSITIES; SILICON SUBSTRATES; THERMAL COEFFICIENT OF EXPANSION; WIRELESS APPLICATION;

SILICON;

EID: 84875111519     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390106     Document Type: Conference Paper

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