Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 75, Issue 11, 1999, Pages 1494-1496

  Tran, Chuong A ^a   Osinski, A ^a,c   Karlicek Jr , R F ^a   Berishev, I ^b  

^a EMCORE CORPORATION   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c NZ Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THRESHOLD ELEMENTS;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

QUANTUM WELL LASERS;

EID: 0032606272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124733     Document Type: Article

References (6)

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