Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Arulkumaran, S ^a   Egawa, T ^a   Matsui, S ^a   Ishikawa, H ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

BUFFER LAYER THICKNESS; CONTACT RESISTANCE; LAMP ANNEALING; POWER SWITCHING APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17944370096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1879091     Document Type: Article

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