Defect distribution in a-plane GaN on Al2 O3

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Tuomisto, F ^a   Paskova, T ^b   Kroger R ^b   Figge, S ^b   Hommel, D ^b   Monemar, B ^c   Kersting, R ^d  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF BREMEN   (Germany)

^c LINKÖPING UNIVERSITY   (Sweden)

^d TASCON GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DISTRIBUTION; KINETICS RELATED DEFECT INCORPORATION; NONUNIFORM DEFECT DISTRIBUTION; ORIENTATION DEPENDENCE;

GALLIUM NITRIDE;

EID: 33947574308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2715128     Document Type: Article

References (18)

1. M. D. Craven, F. Wu, S. H. Lim, J. S. Speck, and S. P. Denbaars, Appl. Phys. Lett. 81, 1201 (2002).
2. B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. Denbaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 644 (2003).
3. B. A. Haskell, T. J. Baker, M. B. McLaurin, F. Wu, P. T. Fini, S. P. Denbaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 86, 111917 (2005).
4. B. A. Haskell, A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. Denbaars, J. S. Speck, and S. Nakamura, J. Electron. Mater. 34, 357 (2005).
5. T. Paskova, V. Darakchieva, P. P. Paskov, J. Birch, E. Valcheva, P. O. A. Persson, B. Arnaudov, S. Tungasmita, and B. Monemar, J. Cryst. Growth 281, 55 (2005).
6. F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. Hageman, and J. Likonen, Appl. Phys. Lett. 86, 031915 (2005).
7. D. C. Look, C. E. Stutz, R. J. Molnar, K. Saarinen, and Z. Liliental-Weber, Solid State Commun. 117, 571 (2001).
8. X. L. Sun, S. H. Goss, L. J. Brillson, D. C. Look, and R. J. Molnar, J. Appl. Phys. 91, 6729 (2002).
9. J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han, Appl. Phys. Lett. 82, 3433 (2003).
10. F. Tuomisto, K. Saarinen, T. Paskova, B. Monemar, M. Bockowski, and T. Suski, J. Appl. Phys. 99, 066105 (2006).
11. T. Paskova, P. P. Paskov, V. Darakchieva, E. M. Goldys, U. Södervall, E. Valcheva, B. Arnaudov, and B. Monemar, Phys. Status Solidi C 0, 209 (2002).
12. A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg, and M. Fatemi, J. Cryst. Growth 260, 54 (2004).
13. R. Kröger, T. Paskova, B. Monemar, S. Figge, D. Hommel, and A. Rosenauer, Proceedings of the International Workshop on Nitride Semiconductors (IWN2006), 22-27 October 2006, Kyoto, Japan, (unpublished).
14. K. Saarinen, P. Hautojärvi, and C. Corbel, in Identification of Defects in Semiconductors, edited by, M. Stavola, (Academic, New York, 1998), Vol. 51A, p. 209.
15. F. Tuomisto, T. Paskova, S. Figge, D. Hommel, and B. Monemar, J. Cryst. Growth 300, 251 (2007).
16. S. Hautakangas, V. Ranki, I. Makkonen, M. J. Puska, K. Saarinen, X. Xu, and D. C. Look, Phys. Rev. B 73, 193301 (2006).
17. J. Oila, V. Ranki, J. Kivioja, K. Saarinen, P. Hautojärvi, J. Likonen, J. M. Baranowski, K. Pakula, T. Suski, M. Leszczynski, and I. Grzegory, Phys. Rev. B 63, 045205 (2001).
18. E. Frayssinet, W. Knap, S. Krukowski, P. Perlin, P. Wisniewski, T. Suski, I. Grzegory, and S. Porowski, J. Cryst. Growth 230, 442 (2001).