RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 354-356

  Jessen, G H ^a   Gillespie, J K ^a   Via, G D ^a   Crespo, A ^a   Langley, D ^a   Aumer, M E ^b   Ward, C S ^b   Henry, H G ^b   Thomson, D B ^b   Partlow, D P ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

AlInN; GaN; High electron mobility transistor (HEMT); InAlN; Power

Indexed keywords

ELECTRIC POWER MEASUREMENT; GALLIUM NITRIDE; SILICON CARBIDE;

CONTINUOUS-WAVE POWER MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247638562     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895417     Document Type: Article

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