Raman scattering studies on single-crystalline bulk AIN under high pressures

Applied Physics Letters

Volumn 78, Issue 6, 2001, Pages 724-726

  Kuball, M ^a   Hayes, J M ^a   Prins, A D ^b   Van Uden, N W A ^b   Dunstan, D J ^b   Shi, Ying ^c   Edgar, J H ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c Kansas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001059682     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344567     Document Type: Article

References (23)

1. H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, and K. Hiramatsu, Appl. Phys. Lett. 71, 2490 (1997).
2. M. Holtz, M. Seon, T. Prokofyeva, H. Temkin, R. Singh, F. P. Dahkowski, and T. D. Moustakas, Appl. Phys. Lett. 75, 1757 (1499).
3. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
4. P. Ramvall, Y. Aoyagi, A. Kuramata, P. Hacke, and K. Horino, Appl. Phys. Lett. 74, 3866 (1999).
5. J.-M. Wagner and F. Bechstedt, Phys. Rev. B 62, 4526 (2000).
6. P. Perlin, C. Jauberthie-Carillon, J. P. Itie, A. S. Miguel, I. Grzegory, and A. Polian, Phys. Rev. B 45, 83 (1992).
7. K. Demangent, J. Frandon, M. A. Renucci, O. Briot, B. Gil, and R. L. Aulombard, Solid State Commun. 100, 207 (1996).
8. Y. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Seminova, J. Appl. Phys. 82, 5097 (1997).
9. J. H. Edgar, L. H. Robins, S. E. Coatney, L. Liu, J. Chaudhuri, K. Ignatiev, and Z. Rek, Mater. Sci. Forum 338-342, 1599 (2000).
10. L. J. Schowalter, Y. Shusterman, R. Wang, L. Bhat, G. Arunmozhi, and G. A. Slack, MRS Internet J. Nitride Semicond. Res. 4S1, G3.76 (1999).
11. P. Perlin, A. Polian, and T. Suski, Phys. Rev. B 47, 2874 (1993).
12. M. Kuball, J. M. Hayes, Ying Shi, and J. H. Edgar, Appl. Phys. Lett. 77, 1958 (2000).
13. H. K. Mao, P. M. Bell, J. W. Shaner, and D. J. Steinberg, J. Appl. Phys. 49, 3276 (1978).
14. D. J. Dunstan and W. Scherrer, Rev. Sci. Instrum. 59, 627 (1988).
15. I. L. Spain and D. J. Dunstan, J. Phys. E 22, 923 (1989).
16. R. Loudon, Adv. Phys. 13, 423 (1964).
17. T. Azuhata, T. Sota, K. Suzuki, and S. Nakamura, J. Phys.: Condens. Matter 7, L129 (1995).
18. F. Demangeot, J. Groenen, J. Frandon, M. A. Renucci, O. Briot, S. Clur, and R. L. Aulombard, Appl. Phys. Lett. 72, 2674 (1998).
19. J. M. Hayes, M. Kuball, Ying Shi, and J. H. Edgar, Jpn. J. Appl. Phys., Part 2 39, L710 (2000).
20. A. Polian, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, 1999), pp. 11-20.
21. S. A. Sanjurjo, E. López-Cruz, P. Vogl, and M. Cardona, Phys. Rev. B 28, 4579 (1983).
22. L. E. McNeil, M. Grimsditch, and R. H. French, J. Am. Ceram. Soc. 76, 1132 (1993).
23. M. D. Frogley, D. J. Dunstan, and W. Palosz, Solid State Commun. 107, 537 (1998).