Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(1 1 1) template formed by C+-ion implantation into Si(1 1 1) substrate

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 266-270

  Yamamoto, A ^a   Yamauchi, T ^a   Tanikawa, T ^a   Sasase, M ^b   Ghosh, B K ^a   Hashimoto, A ^a   Ito, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; CRACKS; GALLIUM NITRIDE; ION IMPLANTATION; MORPHOLOGY; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SUBSTRATES; TENSILE STRESS; THERMAL CONDUCTIVITY; THERMAL EXPANSION;

BAND GAPS; NITRIDATION;

VAPOR PHASE EPITAXY;

EID: 0346154898     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.041     Document Type: Conference Paper

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