SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN

Applied Physics Letters

Volumn 69, Issue 15, 1996, Pages 2264-2266

  Steckl, A J ^a   Devrajan, J ^a   Tran, C ^b   Stall, R A ^b  

^a UNIVERSITY OF CINCINNATI   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001257258     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117528     Document Type: Article

References (14)

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