Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 335-340

  Uen, Wu Yih ^a   Li, Zhen Yu ^a   Lan, Shan Ming ^b   Liao, Sen Mao ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

A1. Nitridation; A1. Photoluminescence; A1. Si(1 1 1) substrate; A3. Metalorganic chemical vapor deposition; B1. GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES;

GAN; NITRIDATION; ROOT MEAN SQUARE (RMS); SI(III) SUBSTRATE;

EPITAXIAL GROWTH;

EID: 20344393163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.084     Document Type: Article

References (24)

1. S. Nakamura, T. Mukai, and M. Senoh Appl. Phys. Lett. 64 1994 1867
2. S. Guha, and N.A. Bojarczuk Appl. Phys. Lett. 72 1998 415
3. S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and M. Mukai Jpn. J. Appl. Phys. 38 1999 L226
4. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho J. Crystal Growth 189/190 1998 820
5. W.A. Melton, and J.I. Pankove J. Crystal Growth 178 1997 168
6. V.A. Joshkin, C.A. Parker, S.M. Bedair, L.Y. Krasnobaev, J.J. Cuomo, R.F. Davis, and A. Suvkhanov Appl. Phys. Lett. 72 1998 2838
7. H. Nagano, Z.X. Qin, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi J. Crystal Growth 189/190 1998 265
8. Z.C. Feng, X. Zhang, S.J. Chua, T.R. Yang, J.C. Deng, and G. Xu Thin Solid Films 409 2002 15
9. J.R. Gong, M.F. Yeh, and C.L. Wang J. Crystal Growth 247 2003 261
10. Y. Lu, X. Liu, D.-C. Lu, H. Yuan, G. Hu, X. Wang, Z. Wang, and X. Duan J. Crystal Growth 247 2003 91
11. H. Zhang, Z. Ye, and B. Zhao J. Crystal Growth 210 2000 511
12. S. Zamir, B. Meyler, E. Zolotoyabko, and J. Salzman J. Crystal Growth 218 2000 181
13. S.-H. Jang, S.-J. Lee, I.-S. Seo, H.-K. Ahn, O.-Y. Lee, J.-Y. Leem, and C.-R. Lee J. Crystal Growth 241 2002 289
14. M.-H. Kim, Y.-G. Do, H.C. Kang, D.Y. Noh, and S.-J. Park Appl. Phys. Lett. 79 2001 2713
15. S.-E. Park, S.-M. Lim, C.-R. Lee, C.S. Kim, and O. Byungsung J. Crystal Growth 249 2003 487
16. A. Yamamoto, T. Yamauchi, T. Tanikawa, M. Sasase, B.K. Ghosh, A. Hashimoto, and Y. Ito J. Crystal Growth 261 2004 266
17. P. Chen, S.Y. Xie, Z.Z. Chen, Y.G. Zhou, B. Shen, R. Zhang, Y.D. Zheng, J.M. Zhu, M. Wang, X.S. Wu, S.S. Jiang, and D. Feng J. Crystal Growth 213 2000 27
18. J. Huang, Z. Ye, L. Wang, J. Yuan, B. Zhao, and H. Lu Solid-State Electron. 46 2002 1231
19. C.-L. Wu, J.-C. Wang, M.-H. Chan, T.T. Chen, and S. Gwo Appl. Phys. Lett. 83 2003 4530
20. P. Perlin, T. Suski, H. Teisseyre, M. Leszezynski, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernholc, J.C. Chervin, A. Polian, and T.D. Moustakas Phys. Rev. Lett. 75 1995 296
21. L. Dobos, B. Pécz, E. Feltin, B. Beaumont, and P. Gibart Vacuum 71 2003 285
22. M.-H. Kim, Y.-C. Bang, N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-I. Park Appl. Phys. Lett. 78 2001 2858
23. S. Sakai, T. Wang, Y. Morishima, and Y. Naoi J. Crystal Growth 221 2003 334
24. T. Wang, Y. Morishima, Y. Naoi, and S. Sakai J. Crystal Growth 213 2003 188