Photoluminescence from laser assisted debonded epitaxial GaN and ZnO films

Applied Physics Letters

Volumn 74, Issue 18, 1999, Pages 2678-2680

  Tavernier, P R ^a   Verghese, P M ^a   Clarke, D R ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; THERMAL EXPANSION; THIN FILMS; ZINC OXIDE;

DEFECT FORMATION ENERGY; LASER ASSISTED DEBONDING;

SEMICONDUCTING FILMS;

EID: 0032606755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123934     Document Type: Article

References (9)

1. M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann, Phys. Status Solidi A 159, R3 (1997).
2. W. S. Wong, T. Sands, and N. W. Cheung, Appl. Phys. Lett. 72, 599 (1998).
3. V. Srikant, V. Sergo, and D. R. Clarke, J. Am. Ceram. Soc. 78, 1931 (1995).
4. 2/6Rh)where Y is Young's modulus, H is the substrate thickness, h is the film thickness, R is the radius of curvature, and v is Poisson's ratio.
5. G. E. Pikus, Sov. Phys. Solid State 6, 261 (1964).
6. V. Srikant and D. R. Clarke, J. Appl. Phys. 81, 6357 (1997).
7. M. Leszczynski, H. Teisseyre, T. Suski, et al., Acta Phys. Pol. A 90, 887 (1996).
8. V. Srikant, thesis, University of California Santa Barbara, 1996.
9. B. Gil, O. Briot, and R. Aulombard, Phys. Rev. B 52, R17028 (1995).