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Applied Physics Letters

Volumn 77, Issue 12, 2000, Pages 1846-1848

Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer

(5) Wang, D b Hiroyama, Y a,b Tamura, M b Ichikawa, M b Yoshida, S c

a SUMITOMO CHEMICAL CO LTD (Japan)

b JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

c Yokohama R and D Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001544371 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1311607 Document Type: Article

Times cited : (58)

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